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Conference Paper: A phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances

TitleA phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances
Authors
Issue Date2016
Citation
The 2016 Gordon Research Conference (GRC) on Hybrid Electronic & Photonic Materials and Phenomena, The Hong Kong University of Science and Technology, Hong Kong, China, 19-24 June 2016. How to Cite?
AbstractA novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.
DescriptionConference Theme: Fundamentals of Organic and Inorganic Semiconductors and Their Integration in Hybrid Electronic and Photonic Devices
No.12
Persistent Identifierhttp://hdl.handle.net/10722/232255

 

DC FieldValueLanguage
dc.contributor.authorHong, YH-
dc.contributor.authorPoon, CT-
dc.contributor.authorYam, VWW-
dc.date.accessioned2016-09-20T05:28:46Z-
dc.date.available2016-09-20T05:28:46Z-
dc.date.issued2016-
dc.identifier.citationThe 2016 Gordon Research Conference (GRC) on Hybrid Electronic & Photonic Materials and Phenomena, The Hong Kong University of Science and Technology, Hong Kong, China, 19-24 June 2016.-
dc.identifier.urihttp://hdl.handle.net/10722/232255-
dc.descriptionConference Theme: Fundamentals of Organic and Inorganic Semiconductors and Their Integration in Hybrid Electronic and Photonic Devices-
dc.descriptionNo.12-
dc.description.abstractA novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.-
dc.languageeng-
dc.relation.ispartofHybrid Electronic & Photonic Materials and Phenomena GRC-
dc.titleA phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances-
dc.typeConference_Paper-
dc.identifier.emailHong, YH: ehongra@hku.hk-
dc.identifier.emailYam, VWW: wwyam@hku.hk-
dc.identifier.authorityYam, VWW=rp00822-
dc.identifier.hkuros267006-

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