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Conference Paper: A phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances
| Title | A phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances |
|---|---|
| Authors | |
| Issue Date | 2016 |
| Citation | The 2016 Gordon Research Conference (GRC) on Hybrid Electronic & Photonic Materials and Phenomena, The Hong Kong University of Science and Technology, Hong Kong, China, 19-24 June 2016. How to Cite? |
| Abstract | A novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds. |
| Description | Conference Theme: Fundamentals of Organic and Inorganic Semiconductors and Their Integration in Hybrid Electronic and Photonic Devices No.12 |
| Persistent Identifier | http://hdl.handle.net/10722/232255 |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Hong, YH | - |
| dc.contributor.author | Poon, CT | - |
| dc.contributor.author | Yam, VWW | - |
| dc.date.accessioned | 2016-09-20T05:28:46Z | - |
| dc.date.available | 2016-09-20T05:28:46Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | The 2016 Gordon Research Conference (GRC) on Hybrid Electronic & Photonic Materials and Phenomena, The Hong Kong University of Science and Technology, Hong Kong, China, 19-24 June 2016. | - |
| dc.identifier.uri | http://hdl.handle.net/10722/232255 | - |
| dc.description | Conference Theme: Fundamentals of Organic and Inorganic Semiconductors and Their Integration in Hybrid Electronic and Photonic Devices | - |
| dc.description | No.12 | - |
| dc.description.abstract | A novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds. | - |
| dc.language | eng | - |
| dc.relation.ispartof | Hybrid Electronic & Photonic Materials and Phenomena GRC | - |
| dc.title | A phosphole oxide-containing organogold(III) complex for solution-processable resistive memory devices with ternary memory performances | - |
| dc.type | Conference_Paper | - |
| dc.identifier.email | Hong, YH: ehongra@hku.hk | - |
| dc.identifier.email | Yam, VWW: wwyam@hku.hk | - |
| dc.identifier.authority | Yam, VWW=rp00822 | - |
| dc.identifier.hkuros | 267006 | - |