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Conference Paper: Strain relaxation effects in GaN/InGaN microdisks pivoted on Si

TitleStrain relaxation effects in GaN/InGaN microdisks pivoted on Si
Authors
Zhang, YHuang, JWang, TChoi, HW
Issue Date2015
Citation
The 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015. How to Cite?
DescriptionThOO10
Persistent Identifierhttp://hdl.handle.net/10722/232279

 

DC FieldValueLanguage
dc.contributor.authorZhang, Y-
dc.contributor.authorHuang, J-
dc.contributor.authorWang, T-
dc.contributor.authorChoi, HW-
dc.date.accessioned2016-09-20T05:28:55Z-
dc.date.available2016-09-20T05:28:55Z-
dc.date.issued2015-
dc.identifier.citationThe 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 August-4 September 2015.-
dc.identifier.urihttp://hdl.handle.net/10722/232279-
dc.descriptionThOO10-
dc.languageeng-
dc.relation.ispartofInternational Conference on Nitride Semiconductors, ICNS-11-
dc.titleStrain relaxation effects in GaN/InGaN microdisks pivoted on Si-
dc.typeConference_Paper-
dc.identifier.emailHuang, J: jahuang@HKUCC-COM.hku.hk-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.hkuros263496-

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