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- Publisher Website: 10.1109/TED.2016.2541319
- Scopus: eid_2-s2.0-84979469556
- WOS: WOS:000375004500015
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Article: Positive Gate Bias and Temperature-Induced Instability of α -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric
| Title | Positive Gate Bias and Temperature-Induced Instability of α -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric |
|---|---|
| Authors | |
| Keywords | Amorphous indium-gallium-zinc oxide (α-IGZO) electrical instability high-k gate dielectric thin-film transistor (TFT). |
| Issue Date | 2016 |
| Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 |
| Citation | IEEE Transactions on Electron Devices, 2016, v. 63 n. 5, p. 1899-1903 How to Cite? |
| Persistent Identifier | http://hdl.handle.net/10722/234056 |
| ISSN | 2021 Impact Factor: 3.221 2020 SCImago Journal Rankings: 0.828 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | HUANG, X | - |
| dc.contributor.author | SONG, J | - |
| dc.contributor.author | Lai, PT | - |
| dc.date.accessioned | 2016-10-14T06:58:46Z | - |
| dc.date.available | 2016-10-14T06:58:46Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | IEEE Transactions on Electron Devices, 2016, v. 63 n. 5, p. 1899-1903 | - |
| dc.identifier.issn | 0018-9383 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/234056 | - |
| dc.language | eng | - |
| dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16 | - |
| dc.relation.ispartof | IEEE Transactions on Electron Devices | - |
| dc.rights | IEEE Transactions on Electron Devices. Copyright © IEEE. | - |
| dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
| dc.subject | Amorphous indium-gallium-zinc oxide (α-IGZO) | - |
| dc.subject | electrical instability | - |
| dc.subject | high-k gate dielectric | - |
| dc.subject | thin-film transistor (TFT). | - |
| dc.title | Positive Gate Bias and Temperature-Induced Instability of α -InGaZnO Thin-Film Transistor With ZrLaO Gate Dielectric | - |
| dc.type | Article | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.doi | 10.1109/TED.2016.2541319 | - |
| dc.identifier.scopus | eid_2-s2.0-84979469556 | - |
| dc.identifier.hkuros | 267833 | - |
| dc.identifier.volume | 63 | - |
| dc.identifier.issue | 5 | - |
| dc.identifier.spage | 1899 | - |
| dc.identifier.epage | 1903 | - |
| dc.identifier.isi | WOS:000375004500015 | - |
| dc.publisher.place | United States | - |
| dc.identifier.issnl | 0018-9383 | - |