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Conference Paper: Atomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus

TitleAtomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus
Authors
Liu, FWang, JGuo, H
Issue Date2016
PublisherIEEE.
Citation
The 21st IEEE Silicon Nanoelectronics Workshop (SNW 2016), Honolulu, HI., 12-13 June 2016. In Conference Proceedings, 2016, p. 194-195 How to Cite?
DOI: http://dx.doi.org/10.1109/SNW.2016.7578047
AbstractWe investigated the ballistic transport characteristics of black phosphorus tunneling transistors using BP hetero-junction with thicker BP film at the source-channel interface. With the reduced tunneling barrier width on-current can be increased over 6 orders in 1L-2L-1L ZD BP heterogeneous TFETs compared with 1L BP homogenous TFETs at the same ION/IOFF ratio. ION can be further enhanced by using 2L and 3L BP in source. It is also found that device performance of BP He-TFETs greatly depends on transport direction, and ION or ION/IOFF ratio can not be improved in BP He-TFETs in armchair direction without edge passivation due to interface states. © 2016 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/236635
ISBN
978-150900726-4

 

DC FieldValueLanguage
dc.contributor.authorLiu, F-
dc.contributor.authorWang, J-
dc.contributor.authorGuo, H-
dc.date.accessioned2016-12-01T09:08:28Z-
dc.date.available2016-12-01T09:08:28Z-
dc.date.issued2016-
dc.identifier.citationThe 21st IEEE Silicon Nanoelectronics Workshop (SNW 2016), Honolulu, HI., 12-13 June 2016. In Conference Proceedings, 2016, p. 194-195-
dc.identifier.isbn978-150900726-4-
dc.identifier.urihttp://hdl.handle.net/10722/236635-
dc.description.abstractWe investigated the ballistic transport characteristics of black phosphorus tunneling transistors using BP hetero-junction with thicker BP film at the source-channel interface. With the reduced tunneling barrier width on-current can be increased over 6 orders in 1L-2L-1L ZD BP heterogeneous TFETs compared with 1L BP homogenous TFETs at the same ION/IOFF ratio. ION can be further enhanced by using 2L and 3L BP in source. It is also found that device performance of BP He-TFETs greatly depends on transport direction, and ION or ION/IOFF ratio can not be improved in BP He-TFETs in armchair direction without edge passivation due to interface states. © 2016 IEEE.-
dc.languageeng-
dc.publisherIEEE.-
dc.relation.ispartofIEEE Silicon Nanoelectronics Workshop, SNW 2016 Proceedings-
dc.rightsIEEE Silicon Nanoelectronics Workshop, SNW 2016 Proceedings. Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.titleAtomistic simulations of hetero-junction tunneling field-effect transistors with layered black phosphorus-
dc.typeConference_Paper-
dc.identifier.emailLiu, F: feiliu@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityLiu, F=rp02229-
dc.identifier.authorityWang, J=rp00799-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/SNW.2016.7578047-
dc.identifier.scopuseid_2-s2.0-84994756542-
dc.identifier.hkuros272084-
dc.identifier.spage194-
dc.identifier.epage195-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 170524 merged-

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