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Conference Paper: Atomistic simulation of phase change memory during switching

TitleAtomistic simulation of phase change memory during switching
Authors
Chen, YHZhang, LNChan, MSCheung, KTWang, YWang, J
KeywordsAmorphization
Crystallization
Molecular dynamics
Phase change material
Issue Date2014
PublisherIEEE. The Conference Abstracts' website is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=7054076
Citation
The 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), Chengdu, China, 18-20 June 2014. In Conference Proceedings, 2014, p. 1-2 How to Cite?
DOI: http://dx.doi.org/10.1109/EDSSC.2014.7061201
AbstractA methodology to study phase-change memory programming at atomistic level during SET and RESET operations is presented. Based on the melt-quench scheme, the molecular dynamic for amorphization and crystallization of GeTe been investigated. The time evolution of the crystal structure under different annealing and quenching conditions has been demonstrated. The final structure under different SET and RESET conditions can be predicted using the proposed method. © 2014 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/241022
ISBN
978-147992334-2

 

DC FieldValueLanguage
dc.contributor.authorChen, YH-
dc.contributor.authorZhang, LN-
dc.contributor.authorChan, MS-
dc.contributor.authorCheung, KT-
dc.contributor.authorWang, Y-
dc.contributor.authorWang, J-
dc.date.accessioned2017-05-22T09:21:15Z-
dc.date.available2017-05-22T09:21:15Z-
dc.date.issued2014-
dc.identifier.citationThe 2014 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC 2014), Chengdu, China, 18-20 June 2014. In Conference Proceedings, 2014, p. 1-2-
dc.identifier.isbn978-147992334-2-
dc.identifier.urihttp://hdl.handle.net/10722/241022-
dc.description.abstractA methodology to study phase-change memory programming at atomistic level during SET and RESET operations is presented. Based on the melt-quench scheme, the molecular dynamic for amorphization and crystallization of GeTe been investigated. The time evolution of the crystal structure under different annealing and quenching conditions has been demonstrated. The final structure under different SET and RESET conditions can be predicted using the proposed method. © 2014 IEEE.-
dc.languageeng-
dc.publisherIEEE. The Conference Abstracts' website is located at http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=7054076-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 Proceedings-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 Proceedings. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectAmorphization-
dc.subjectCrystallization-
dc.subjectMolecular dynamics-
dc.subjectPhase change material-
dc.titleAtomistic simulation of phase change memory during switching-
dc.typeConference_Paper-
dc.identifier.emailWang, Y: yinwang@hku.hk-
dc.identifier.emailWang, J: jianwang@hku.hk-
dc.identifier.authorityWang, Y=rp01851-
dc.identifier.authorityWang, J=rp00799-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/EDSSC.2014.7061201-
dc.identifier.scopuseid_2-s2.0-84949925733-
dc.identifier.hkuros272080-
dc.identifier.spage1-
dc.identifier.epage2-
dc.publisher.placeUnited States-
dc.customcontrol.immutablesml 170524-

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