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Article: Improved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer

TitleImproved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 2, article no. 023514 How to Cite?
AbstractThe effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011 cm−2 eV−1) and oxide-charge density (−3.90 × 1012 cm−2), low gate leakage current density (1.77 × 10−4 A/cm2 at Vg = Vfb + 1 V), and high reliability under high-field stress.
Persistent Identifierhttp://hdl.handle.net/10722/247427
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorCheng, ZX-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorHuang, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:05Z-
dc.date.available2017-10-18T08:27:05Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 2, article no. 023514-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247427-
dc.description.abstractThe effects of TaON/LaON dual passivation interlayer on the interfacial and electrical properties of Ge metal-oxide-semiconductor (MOS) capacitor with HfO2 gate dielectric are investigated. As compared to its counterpart with only LaON as passivation interlayer, the formation of HfGeOx and LaHfOx, which would degrade the interfacial quality, is effectively suppressed due to the strong blocking role of the TaON barrier layer against Hf diffusion. As a result, excellent interfacial and electrical properties are achieved for the Ge MOS device with the TaON/LaON dual passivation interlayer: high k value (20.9), low interface-state density (5.32 × 1011 cm−2 eV−1) and oxide-charge density (−3.90 × 1012 cm−2), low gate leakage current density (1.77 × 10−4 A/cm2 at Vg = Vfb + 1 V), and high reliability under high-field stress.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 2, article no. 023514 and may be found at https://doi.org/10.1063/1.4958837-
dc.titleImproved interfacial and electrical properties of Ge MOS capacitor by using TaON/LaON dual passivation interlayer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4958837-
dc.identifier.scopuseid_2-s2.0-84978722227-
dc.identifier.hkuros280815-
dc.identifier.volume109-
dc.identifier.issue2-
dc.identifier.spagearticle no. 023514-
dc.identifier.epagearticle no. 023514-
dc.identifier.isiWOS:000381155200068-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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