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Article: Y-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications

TitleY-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications
Authors
SHI, RHuang, XDSin, JKOLai, PT
KeywordsBaTiO3
charge-trapping
Nonvolatile memory
Y doping
Issue Date2016
Citation
IEEE Electron Device Letters, 2016, v. 37, p. 1555-1558 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2016.2615063
AbstractThe charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.
Persistent Identifierhttp://hdl.handle.net/10722/247428
ISSN
0741-3106
2021 Impact Factor: 4.816
2020 SCImago Journal Rankings: 1.337
ISI Accession Number ID
WOS:000389332700006

 

DC FieldValueLanguage
dc.contributor.authorSHI, R-
dc.contributor.authorHuang, XD-
dc.contributor.authorSin, JKO-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:06Z-
dc.date.available2017-10-18T08:27:06Z-
dc.date.issued2016-
dc.identifier.citationIEEE Electron Device Letters, 2016, v. 37, p. 1555-1558-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/247428-
dc.description.abstractThe charge-trapping properties of Y-doped BaTiO3 (Y-BTO) are investigated using an Al/Al2O3/Y-BTO/SiO2/Si structure. Compared with the memory capacitor with pure BaTiO3, the one with Y doping shows better charge-trapping characteristics, including larger memory window (7.4 V at ±14 V sweeping voltage), higher program speed (7.5 V at +14 V for 100 μs) and better retention (96% retained charge at 298 K after 104 s) due to its higher trapping efficiency resulted from the higher trap density of Y-BTO and higher-quality Y-BTO/SiO2 interface, both induced by the Y doping. Therefore, Y-BTO is a promising candidate as the charge-trapping layer for nonvolatile memory applications.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectBaTiO3-
dc.subjectcharge-trapping-
dc.subjectNonvolatile memory-
dc.subjectY doping-
dc.titleY-Doped BaTiO3 as a Charge-Trapping Layer for Nonvolatile Memory Applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2016.2615063-
dc.identifier.scopuseid_2-s2.0-85000733470-
dc.identifier.hkuros280824-
dc.identifier.volume37-
dc.identifier.spage1555-
dc.identifier.epage1558-
dc.identifier.eissn1558-0563-
dc.identifier.isiWOS:000389332700006-
dc.identifier.issnl0741-3106-

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