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Article: Effects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor

TitleEffects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor
Authors
SONG, JQian, LXLai, PT
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 16, article no. 163504 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4965849
Persistent Identifierhttp://hdl.handle.net/10722/247430
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000386933200040

 

DC FieldValueLanguage
dc.contributor.authorSONG, J-
dc.contributor.authorQian, LX-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:08Z-
dc.date.available2017-10-18T08:27:08Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 16, article no. 163504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247430-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 16, article no. 163504 and may be found at https://doi.org/10.1063/1.4965849-
dc.titleEffects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4965849-
dc.identifier.scopuseid_2-s2.0-84992188405-
dc.identifier.hkuros280829-
dc.identifier.volume109-
dc.identifier.issue16-
dc.identifier.spagearticle no. 163504-
dc.identifier.epagearticle no. 163504-
dc.identifier.isiWOS:000386933200040-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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