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Article: Effects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor

TitleEffects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2016, v. 109 n. 16, article no. 163504 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247430
ISSN
2020 Impact Factor: 3.791
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSONG, J-
dc.contributor.authorQian, LX-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:08Z-
dc.date.available2017-10-18T08:27:08Z-
dc.date.issued2016-
dc.identifier.citationApplied Physics Letters, 2016, v. 109 n. 16, article no. 163504-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247430-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2016, v. 109 n. 16, article no. 163504 and may be found at https://doi.org/10.1063/1.4965849-
dc.titleEffects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4965849-
dc.identifier.scopuseid_2-s2.0-84992188405-
dc.identifier.hkuros280829-
dc.identifier.volume109-
dc.identifier.issue16-
dc.identifier.spagearticle no. 163504-
dc.identifier.epagearticle no. 163504-
dc.identifier.isiWOS:000386933200040-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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