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Article: Improved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer

TitleImproved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer
Authors
Lu, HHXu, JPLiu, LWang, LSLai, PTTang, WM
KeywordsGaAs MOS devices
Interface-state density
Interfacial passivation layer
NH3-plasma treatment
Issue Date2016
Citation
Microelectronics Reliability, 2016, v. 56, p. 17-21 How to Cite?
DOI: http://dx.doi.org/10.1016/j.microrel.2015.10.013
Persistent Identifierhttp://hdl.handle.net/10722/247437
ISI Accession Number ID
WOS:000369450200003

 

DC FieldValueLanguage
dc.contributor.authorLu, HH-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorWang, LS-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:14Z-
dc.date.available2017-10-18T08:27:14Z-
dc.date.issued2016-
dc.identifier.citationMicroelectronics Reliability, 2016, v. 56, p. 17-21-
dc.identifier.urihttp://hdl.handle.net/10722/247437-
dc.languageeng-
dc.relation.ispartofMicroelectronics Reliability-
dc.subjectGaAs MOS devices-
dc.subjectInterface-state density-
dc.subjectInterfacial passivation layer-
dc.subjectNH3-plasma treatment-
dc.titleImproved interfacial quality of GaAs metal-oxide-semiconductor device with NH 3 -plasma treated yittrium-oxynitride as interfacial passivation layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1016/j.microrel.2015.10.013-
dc.identifier.scopuseid_2-s2.0-84954071160-
dc.identifier.hkuros280890-
dc.identifier.volume56-
dc.identifier.spage17-
dc.identifier.epage21-
dc.identifier.isiWOS:000369450200003-

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