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Article: Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer

TitleImproved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer
Authors
KeywordsAlternately depositing La oxynitride (LaON)/TiON
GaAs metal-oxide-semiconductor (MOS) capacitors
Interface-state density
Laon interlayer
Issue Date2017
Citation
IEEE Transactions on Electron Devices, 2017, v. 64, p. 1535-1540 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247438
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLu, HH-
dc.contributor.authorLiu, L-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:15Z-
dc.date.available2017-10-18T08:27:15Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Electron Devices, 2017, v. 64, p. 1535-1540-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/247438-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectAlternately depositing La oxynitride (LaON)/TiON-
dc.subjectGaAs metal-oxide-semiconductor (MOS) capacitors-
dc.subjectInterface-state density-
dc.subjectLaon interlayer-
dc.titleImproved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2667041-
dc.identifier.scopuseid_2-s2.0-85016509241-
dc.identifier.hkuros280920-
dc.identifier.volume64-
dc.identifier.spage1535-
dc.identifier.epage1540-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000398818400018-
dc.identifier.issnl0018-9383-

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