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Article: High-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric

TitleHigh-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric
Authors
LIU, LChoi, HWXu, JPLai, PT
Issue Date2017
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2017, v. 110 n. 12, article no. 123506 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4979101
Persistent Identifierhttp://hdl.handle.net/10722/247441
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000397872000049

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:27:18Z-
dc.date.available2017-10-18T08:27:18Z-
dc.date.issued2017-
dc.identifier.citationApplied Physics Letters, 2017, v. 110 n. 12, article no. 123506-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/247441-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/-
dc.relation.ispartofApplied Physics Letters-
dc.rightsThis article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Applied Physics Letters, 2017, v. 110 n. 12, article no. 123506 and may be found at https://doi.org/10.1063/1.4979101-
dc.titleHigh-performance GaAs metal-oxide-semiconductor capacitor by using NbAlON as high-k gate dielectric-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4979101-
dc.identifier.hkuros280924-
dc.identifier.volume110-
dc.identifier.issue12-
dc.identifier.spagearticle no. 123506-
dc.identifier.epagearticle no. 123506-
dc.identifier.isiWOS:000397872000049-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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