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Article: Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

TitleImproved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer
Authors
KeywordsF-plasma treatment
GaAs MOS capacitor
Interface-state density
Interfacial passivation layer
Issue Date2017
Citation
IEEE Transactions on Device and Materials Reliability, 2017, v. 17, p. 458-462 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247442
ISSN
2019 Impact Factor: 1.407
2015 SCImago Journal Rankings: 0.826
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLu, HH-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2017-10-18T08:27:19Z-
dc.date.available2017-10-18T08:27:19Z-
dc.date.issued2017-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2017, v. 17, p. 458-462-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/247442-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.subjectF-plasma treatment-
dc.subjectGaAs MOS capacitor-
dc.subjectInterface-state density-
dc.subjectInterfacial passivation layer-
dc.titleImproved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TDMR.2017.2702717-
dc.identifier.scopuseid_2-s2.0-85025810963-
dc.identifier.hkuros280928-
dc.identifier.volume17-
dc.identifier.spage458-
dc.identifier.epage462-
dc.identifier.eissn1558-2574-
dc.identifier.isiWOS:000403293000021-
dc.identifier.issnl1530-4388-

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