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Article: Nano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold

TitleNano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold
Authors
Issue Date2016
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 2016, v. 120 n. 16, article no. 165704 How to Cite?
AbstractNano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.
Persistent Identifierhttp://hdl.handle.net/10722/247453
ISSN
2022 Impact Factor: 3.2
2020 SCImago Journal Rankings: 0.699
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorGriffiths, JT-
dc.contributor.authorZhang, S-
dc.contributor.authorLhuillier, J-
dc.contributor.authorZhu, D-
dc.contributor.authorFu, WY-
dc.contributor.authorHowkins, A-
dc.contributor.authorBoyd, I-
dc.contributor.authorStowe, D-
dc.contributor.authorWallis, DJ-
dc.contributor.authorHumphreys, CJ-
dc.contributor.authorOliver, RA-
dc.date.accessioned2017-10-18T08:27:30Z-
dc.date.available2017-10-18T08:27:30Z-
dc.date.issued2016-
dc.identifier.citationJournal of Applied Physics, 2016, v. 120 n. 16, article no. 165704-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10722/247453-
dc.description.abstractNano-cathodoluminescence (Nano-CL) reveals optical emission from individual InGaN quantum wells for applications in optoelectronic devices. We show the luminescent intensity decays over time with exposure to the electron beam for energies between 80 and 200 keV. Measurements of the CL intensity over time show an exponential decline in intensity, which we propose is due to the formation of nitrogen Frenkel defects. The measured CL damage decreases with reductions in the electron accelerating voltage and we suggest that the electron induced structural damage may be suppressed below the proposed damage threshold. The electron beam induced damage leads to a non-radiative region that extends over the measured minority carrier diffusion length. Nano-CL may thus serve as a powerful technique to study III-nitride optoelectronics.-
dc.languageeng-
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp-
dc.relation.ispartofJournal of Applied Physics-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.titleNano-cathodoluminescence reveals the effect of electron damage on the optical properties of nitride optoelectronics and the damage threshold-
dc.typeArticle-
dc.identifier.emailFu, WYG: wyfu@hku.hk-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4965989-
dc.identifier.scopuseid_2-s2.0-84994050068-
dc.identifier.hkuros282430-
dc.identifier.volume120-
dc.identifier.issue16-
dc.identifier.spagearticle no. 165704-
dc.identifier.epagearticle no. 165704-
dc.identifier.isiWOS:000387580600067-
dc.publisher.placeUnited States-
dc.identifier.issnl0021-8979-

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