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- Publisher Website: 10.1109/EDSSC.2016.7785237
- Scopus: eid_2-s2.0-85010521570
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Conference Paper: Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers
Title | Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers |
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Authors | |
Keywords | buffer layer gate dielectric InGaZnO NbLaO thin-film transistor (TFT) |
Issue Date | 2016 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
Citation | Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 173-176 How to Cite? |
Persistent Identifier | http://hdl.handle.net/10722/247820 |
DC Field | Value | Language |
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dc.contributor.author | Song, JQ | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Huang, XD | - |
dc.date.accessioned | 2017-10-18T08:33:10Z | - |
dc.date.available | 2017-10-18T08:33:10Z | - |
dc.date.issued | 2016 | - |
dc.identifier.citation | Proceedings of the 2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Hong Kong, China, 3-5 August 2016, p. 173-176 | - |
dc.identifier.uri | http://hdl.handle.net/10722/247820 | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
dc.relation.ispartof | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | - |
dc.rights | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE. | - |
dc.rights | ©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | buffer layer | - |
dc.subject | gate dielectric | - |
dc.subject | InGaZnO | - |
dc.subject | NbLaO | - |
dc.subject | thin-film transistor (TFT) | - |
dc.title | Comparative study of InGaZnO thin-film transistors with single and dual NbLaO gate dielectric layers | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/EDSSC.2016.7785237 | - |
dc.identifier.scopus | eid_2-s2.0-85010521570 | - |
dc.identifier.hkuros | 280931 | - |
dc.identifier.spage | 173 | - |
dc.identifier.epage | 176 | - |
dc.publisher.place | United States | - |