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Conference Paper: Carrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate

TitleCarrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate
Authors
KeywordsHigh-k dieletric
Metal gate
Organic thin-film transistor
Issue Date2016
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707
Citation
Proceedings of the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 25-28 October 2016, p. 974-977 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/247823

 

DC FieldValueLanguage
dc.contributor.authorMa, Y-
dc.contributor.authorHan, CY-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:33:13Z-
dc.date.available2017-10-18T08:33:13Z-
dc.date.issued2016-
dc.identifier.citationProceedings of the 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, China, 25-28 October 2016, p. 974-977-
dc.identifier.urihttp://hdl.handle.net/10722/247823-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000707-
dc.relation.ispartofInternational Conference on Solid-State and Integrated Circuit Technology Proceedings-
dc.rightsInternational Conference on Solid-State and Integrated Circuit Technology Proceedings. Copyright © IEEE.-
dc.rights©2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectHigh-k dieletric-
dc.subjectMetal gate-
dc.subjectOrganic thin-film transistor-
dc.titleCarrier-mobility improvement for pentacene OTFT with LaZrO dielectric by using Pd gate-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/ICSICT.2016.7998623-
dc.identifier.scopuseid_2-s2.0-85028677624-
dc.identifier.hkuros280934-
dc.identifier.spage974-
dc.identifier.epage977-
dc.publisher.placeUnited States-

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