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Article: Improved Performance of Amorphous InGaMgO Metal-Semiconductor-Metal Ultraviolet Photodetector by Post Deposition Annealing in Oxygen

TitleImproved Performance of Amorphous InGaMgO Metal-Semiconductor-Metal Ultraviolet Photodetector by Post Deposition Annealing in Oxygen
Authors
KeywordsAmorphous InGaMgO
Oxygen vacancy
Post-deposition annealing
Responsivity
Ultraviolet MSM photodetector
Urbach energy
Issue Date2018
Citation
IEEE Transactions on Nanotechnology, 2018, v. 17 n. 2, p. 29-35 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/248409
ISSN
2020 Impact Factor: 2.57
2015 SCImago Journal Rankings: 0.708
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhang, YY-
dc.contributor.authorQian, LX-
dc.contributor.authorWu, ZH-
dc.contributor.authorLai, PT-
dc.contributor.authorLiu, XZ-
dc.date.accessioned2017-10-18T08:42:44Z-
dc.date.available2017-10-18T08:42:44Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Nanotechnology, 2018, v. 17 n. 2, p. 29-35-
dc.identifier.issn1536-125X-
dc.identifier.urihttp://hdl.handle.net/10722/248409-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Nanotechnology-
dc.subjectAmorphous InGaMgO-
dc.subjectOxygen vacancy-
dc.subjectPost-deposition annealing-
dc.subjectResponsivity-
dc.subjectUltraviolet MSM photodetector-
dc.subjectUrbach energy-
dc.titleImproved Performance of Amorphous InGaMgO Metal-Semiconductor-Metal Ultraviolet Photodetector by Post Deposition Annealing in Oxygen-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TNANO.2016.2621128-
dc.identifier.scopuseid_2-s2.0-85040724392-
dc.identifier.hkuros280886-
dc.identifier.volume17-
dc.identifier.issue2-
dc.identifier.spage29-
dc.identifier.epage35-
dc.identifier.eissn1941-0085-
dc.identifier.isiWOS:000422695200005-
dc.identifier.issnl1536-125X-

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