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Article: A Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates

TitleA Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates
Authors
HAN, CMa, YXTang, WMWang, XLLai, PT
Keywordsgate material
HfLaO.
high-κ dielectric
Organic thin-film transistor
Issue Date2017
Citation
IEEE Electron Device Letters, 2017, v. 38, p. 744-747 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2017.2695538
Persistent Identifierhttp://hdl.handle.net/10722/248411
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000402146300012

 

DC FieldValueLanguage
dc.contributor.authorHAN, C-
dc.contributor.authorMa, YX-
dc.contributor.authorTang, WM-
dc.contributor.authorWang, XL-
dc.contributor.authorLai, PT-
dc.date.accessioned2017-10-18T08:42:46Z-
dc.date.available2017-10-18T08:42:46Z-
dc.date.issued2017-
dc.identifier.citationIEEE Electron Device Letters, 2017, v. 38, p. 744-747-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/248411-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectgate material-
dc.subjectHfLaO.-
dc.subjecthigh-κ dielectric-
dc.subjectOrganic thin-film transistor-
dc.titleA Study on Pentacene Organic Thin-Film Transistor With Different Gate Materials on Various Substrates-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/LED.2017.2695538-
dc.identifier.scopuseid_2-s2.0-85021760568-
dc.identifier.hkuros280927-
dc.identifier.volume38-
dc.identifier.spage744-
dc.identifier.epage747-
dc.identifier.eissn1558-0563-
dc.identifier.isiWOS:000402146300012-
dc.identifier.issnl0741-3106-

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