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Article: Effects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor

TitleEffects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor
Authors
Liu, YRHuang, HLai, PTWu, WJChen, RS
KeywordsAnnealing
NbLaO gate dielectric
Thin film transistors
Zinc oxide
Issue Date2017
PublisherIOP Publishing: Open Access Journals. The Journal's web site is located at http://iopscience.iop.org/journal/2399-6528
Citation
Journal of Physics Communications, 2017, v. 1, p. 035003 How to Cite?
DOI: http://dx.doi.org/10.1088/2399-6528/aa8aa9
Persistent Identifierhttp://hdl.handle.net/10722/261757
ISSN
2399-6528
2020 SCImago Journal Rankings: 0.407
ISI Accession Number ID
WOS:000434981800004

 

DC FieldValueLanguage
dc.contributor.authorLiu, YR-
dc.contributor.authorHuang, H-
dc.contributor.authorLai, PT-
dc.contributor.authorWu, WJ-
dc.contributor.authorChen, RS-
dc.date.accessioned2018-09-28T04:47:19Z-
dc.date.available2018-09-28T04:47:19Z-
dc.date.issued2017-
dc.identifier.citationJournal of Physics Communications, 2017, v. 1, p. 035003-
dc.identifier.issn2399-6528-
dc.identifier.urihttp://hdl.handle.net/10722/261757-
dc.languageeng-
dc.publisherIOP Publishing: Open Access Journals. The Journal's web site is located at http://iopscience.iop.org/journal/2399-6528-
dc.relation.ispartofJournal of Physics Communications-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectAnnealing-
dc.subjectNbLaO gate dielectric-
dc.subjectThin film transistors-
dc.subjectZinc oxide-
dc.titleEffects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1088/2399-6528/aa8aa9-
dc.identifier.scopuseid_2-s2.0-85073319408-
dc.identifier.hkuros292216-
dc.identifier.volume1-
dc.identifier.spage035003-
dc.identifier.epage035003-
dc.identifier.isiWOS:000434981800004-
dc.publisher.placeUnited Kingdom-
dc.identifier.issnl2399-6528-

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