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Article: Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric
| Title | Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric |
|---|---|
| Authors | |
| Issue Date | 2016 |
| Publisher | IOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/ |
| Citation | Applied Physics Express, 2016, v. 9, p. 095202 How to Cite? |
| Persistent Identifier | http://hdl.handle.net/10722/261758 |
| ISSN | 2021 Impact Factor: 2.819 2020 SCImago Journal Rankings: 0.911 |
| ISI Accession Number ID |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Wen, M | - |
| dc.contributor.author | Xu, JP | - |
| dc.contributor.author | Liu, L | - |
| dc.contributor.author | Lai, PT | - |
| dc.contributor.author | Tang, WM | - |
| dc.date.accessioned | 2018-09-28T04:47:20Z | - |
| dc.date.available | 2018-09-28T04:47:20Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Applied Physics Express, 2016, v. 9, p. 095202 | - |
| dc.identifier.issn | 1882-0778 | - |
| dc.identifier.uri | http://hdl.handle.net/10722/261758 | - |
| dc.language | eng | - |
| dc.publisher | IOP Publishing, published in association with Japan Society of Applied Physics. The Journal's web site is located at http://iopscience.iop.org/1882-0786/ | - |
| dc.relation.ispartof | Applied Physics Express | - |
| dc.rights | Applied Physics Express. Copyright © IOP Publishing, published in association with Japan Society of Applied Physics. | - |
| dc.rights | This is an author-created, un-copyedited version of an article published in [insert name of journal]. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/[insert DOI]. | - |
| dc.title | Effects of annealing on electrical performance of multilayer MoS2 transistors with atomic layer deposited HfO2 gate dielectric | - |
| dc.type | Article | - |
| dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
| dc.identifier.authority | Lai, PT=rp00130 | - |
| dc.identifier.doi | 10.7567/APEX.9.095202 | - |
| dc.identifier.scopus | eid_2-s2.0-84987678265 | - |
| dc.identifier.hkuros | 292220 | - |
| dc.identifier.volume | 9 | - |
| dc.identifier.spage | 095202 | - |
| dc.identifier.epage | 095202 | - |
| dc.identifier.isi | WOS:000383983700021 | - |
| dc.publisher.place | United Kingdom | - |
| dc.identifier.issnl | 1882-0778 | - |