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Article: High-Performance Pentacene Organic Thin-Film Transistor by using Nd2O3 Gate Dielectric doped with Nb

TitleHigh-Performance Pentacene Organic Thin-Film Transistor by using Nd2O3 Gate Dielectric doped with Nb
Authors
MA, YTang, WMHAN, CLai, PT
Keywordshigh-k
NdNbO
pentacene organic thin-film transistors
Issue Date2018
Citation
Physica Status Solidi A: Applications and Materials Science, 2018, v. 215, p. 1700609 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.201700609
Persistent Identifierhttp://hdl.handle.net/10722/261760
ISI Accession Number ID
WOS:000427138600007

 

DC FieldValueLanguage
dc.contributor.authorMA, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorHAN, C-
dc.contributor.authorLai, PT-
dc.date.accessioned2018-09-28T04:47:24Z-
dc.date.available2018-09-28T04:47:24Z-
dc.date.issued2018-
dc.identifier.citationPhysica Status Solidi A: Applications and Materials Science, 2018, v. 215, p. 1700609-
dc.identifier.urihttp://hdl.handle.net/10722/261760-
dc.languageeng-
dc.relation.ispartofPhysica Status Solidi A: Applications and Materials Science-
dc.subjecthigh-k-
dc.subjectNdNbO-
dc.subjectpentacene organic thin-film transistors-
dc.titleHigh-Performance Pentacene Organic Thin-Film Transistor by using Nd2O3 Gate Dielectric doped with Nb-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1002/pssa.201700609-
dc.identifier.scopuseid_2-s2.0-85040161410-
dc.identifier.hkuros292222-
dc.identifier.volume215-
dc.identifier.spage1700609-
dc.identifier.epage1700609-
dc.identifier.isiWOS:000427138600007-

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