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Article: GaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer

TitleGaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer
Authors
KeywordsGaAs metal-oxide-semiconductor (MOS)
Interface states density
Interfacial passivation layer (IPL)
Nd-based high-k
Issue Date2018
Citation
IEEE Transactions on Electron Devices, 2018, v. 65, p. 72-78 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/261761
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorChoi, HW-
dc.contributor.authorXu, JP-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2018-09-28T04:47:26Z-
dc.date.available2018-09-28T04:47:26Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Electron Devices, 2018, v. 65, p. 72-78-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/261761-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectGaAs metal-oxide-semiconductor (MOS)-
dc.subjectInterface states density-
dc.subjectInterfacial passivation layer (IPL)-
dc.subjectNd-based high-k-
dc.titleGaAs Metal–Oxide–Semiconductor Capacitor With Nd-Based High-k Oxynitrides as Gate Dielectric and Passivation Layer-
dc.typeArticle-
dc.identifier.emailChoi, HW: hwchoi@hku.hk-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityChoi, HW=rp00108-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/TED.2017.2777938-
dc.identifier.scopuseid_2-s2.0-85038378586-
dc.identifier.hkuros292223-
dc.identifier.volume65-
dc.identifier.spage72-
dc.identifier.epage78-
dc.identifier.eissn1557-9646-
dc.identifier.isiWOS:000418753200011-
dc.identifier.issnl0018-9383-

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