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Article: Indium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure

TitleIndium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure
Authors
Liu, YLiu, JSONG, JLai, PTYao, RH
KeywordsAmorphous ingazno (a-IGZO)
High-k dielectric
Planar split dual gate
Thin-film transistor (TFT)
Issue Date2017
Citation
Modern Physics Letters B, 2017, v. 31, p. 1750332 How to Cite?
DOI: http://dx.doi.org/10.1142/S0217984917503328
Persistent Identifierhttp://hdl.handle.net/10722/261762
ISSN
0217-9849
2023 Impact Factor: 1.8
2023 SCImago Journal Rankings: 0.334
ISI Accession Number ID
WOS:000418035600004

 

DC FieldValueLanguage
dc.contributor.authorLiu, Y-
dc.contributor.authorLiu, J-
dc.contributor.authorSONG, J-
dc.contributor.authorLai, PT-
dc.contributor.authorYao, RH-
dc.date.accessioned2018-09-28T04:47:27Z-
dc.date.available2018-09-28T04:47:27Z-
dc.date.issued2017-
dc.identifier.citationModern Physics Letters B, 2017, v. 31, p. 1750332-
dc.identifier.issn0217-9849-
dc.identifier.urihttp://hdl.handle.net/10722/261762-
dc.languageeng-
dc.relation.ispartofModern Physics Letters B-
dc.subjectAmorphous ingazno (a-IGZO)-
dc.subjectHigh-k dielectric-
dc.subjectPlanar split dual gate-
dc.subjectThin-film transistor (TFT)-
dc.titleIndium–gallium–zinc–oxide thin-film transistor with a planar split dual-gate structure-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1142/S0217984917503328-
dc.identifier.scopuseid_2-s2.0-85031414153-
dc.identifier.hkuros292225-
dc.identifier.volume31-
dc.identifier.spage1750332-
dc.identifier.epage1750332-
dc.identifier.eissn1793-6640-
dc.identifier.isiWOS:000418035600004-
dc.identifier.issnl0217-9849-

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