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Article: A comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor

TitleA comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor
Authors
LIU, YTang, WMLai, PT
KeywordsHigh-κ dielectric
Hydrogen sensor
Schottky diode
SiC
Issue Date2018
Citation
Sensors and Actuators B: Chemical, 2018, v. 259, p. 725-729 How to Cite?
DOI: http://dx.doi.org/10.1016/j.snb.2017.12.126
Persistent Identifierhttp://hdl.handle.net/10722/261763
ISI Accession Number ID
WOS:000424877600085

 

DC FieldValueLanguage
dc.contributor.authorLIU, Y-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2018-09-28T04:47:28Z-
dc.date.available2018-09-28T04:47:28Z-
dc.date.issued2018-
dc.identifier.citationSensors and Actuators B: Chemical, 2018, v. 259, p. 725-729-
dc.identifier.urihttp://hdl.handle.net/10722/261763-
dc.languageeng-
dc.relation.ispartofSensors and Actuators B: Chemical-
dc.subjectHigh-κ dielectric-
dc.subjectHydrogen sensor-
dc.subjectSchottky diode-
dc.subjectSiC-
dc.titleA comparative study of Hf and Ta incorporations in the dielectric of Pd-WO3-SiC Schottky-diode hydrogen sensor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1016/j.snb.2017.12.126-
dc.identifier.scopuseid_2-s2.0-85039163415-
dc.identifier.hkuros292227-
dc.identifier.volume259-
dc.identifier.spage725-
dc.identifier.epage729-
dc.identifier.isiWOS:000424877600085-

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