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- Publisher Website: 10.1109/EDSSC.2019.8754077
- Scopus: eid_2-s2.0-85069505723
- WOS: WOS:000483036000088
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Conference Paper: Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric
Title | Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric |
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Authors | |
Keywords | Carrier mobility Conduction-band offset Coulomb screening effect Hf-TiO gate dielectric MoS transistor |
Issue Date | 2019 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 |
Citation | Proceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3 How to Cite? |
Abstract | Carrier mobility of MoS 2transistor can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, different TiO 2amounts are incorporated into HfO 2to form Hf 1-x Ti x O gate dielectrics to investigate its effects on the electrical properties of MoS 2transistor. It is found that enhanced carrier mobility and decreased gate leakage current can be achieved by optimizing the Ti content, i.e. with Hf 0.9 Ti 0.1 O (x = 0.1) as the gate dielectric, the device exhibits the highest carrier mobility of 31.5 cm 2 /Vs, which is 1.3× improvement as compared to the sample with HfO 2as gate dielectric (24.1 cm 2 /Vs). The main mechanism lies in that Hf 1-x Ti x O has higher k value than HfO 2to increase the Coulomb screening effect and thus carrier mobility. However, with further increase of Ti content, e.g. Hf 0.85 Ti 0.15 O (x = 0.15), the device exhibits larger off current and degraded subthreshold swing. This is probably attributed to Ti-related oxide traps, a decreased conduction-band offset between Hf 0.85 Ti 0.15 O and MoS 2 , and degraded MoS 2 /Hf 1-x Ti x O interface quality. |
Persistent Identifier | http://hdl.handle.net/10722/277816 |
ISBN | |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Zhao, X | - |
dc.contributor.author | Xu, JP | - |
dc.contributor.author | Liu, L | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2019-10-04T08:01:55Z | - |
dc.date.available | 2019-10-04T08:01:55Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Proceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3 | - |
dc.identifier.isbn | 978-1-7281-0287-0 | - |
dc.identifier.uri | http://hdl.handle.net/10722/277816 | - |
dc.description.abstract | Carrier mobility of MoS 2transistor can be greatly improved by screening the Columbic scattering by a high-k gate dielectric. In this work, different TiO 2amounts are incorporated into HfO 2to form Hf 1-x Ti x O gate dielectrics to investigate its effects on the electrical properties of MoS 2transistor. It is found that enhanced carrier mobility and decreased gate leakage current can be achieved by optimizing the Ti content, i.e. with Hf 0.9 Ti 0.1 O (x = 0.1) as the gate dielectric, the device exhibits the highest carrier mobility of 31.5 cm 2 /Vs, which is 1.3× improvement as compared to the sample with HfO 2as gate dielectric (24.1 cm 2 /Vs). The main mechanism lies in that Hf 1-x Ti x O has higher k value than HfO 2to increase the Coulomb screening effect and thus carrier mobility. However, with further increase of Ti content, e.g. Hf 0.85 Ti 0.15 O (x = 0.15), the device exhibits larger off current and degraded subthreshold swing. This is probably attributed to Ti-related oxide traps, a decreased conduction-band offset between Hf 0.85 Ti 0.15 O and MoS 2 , and degraded MoS 2 /Hf 1-x Ti x O interface quality. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853 | - |
dc.relation.ispartof | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) | - |
dc.rights | IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE. | - |
dc.rights | ©2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | Carrier mobility | - |
dc.subject | Conduction-band offset | - |
dc.subject | Coulomb screening effect | - |
dc.subject | Hf-TiO gate dielectric | - |
dc.subject | MoS transistor | - |
dc.title | Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/EDSSC.2019.8754077 | - |
dc.identifier.scopus | eid_2-s2.0-85069505723 | - |
dc.identifier.hkuros | 306923 | - |
dc.identifier.spage | 1 | - |
dc.identifier.epage | 3 | - |
dc.identifier.isi | WOS:000483036000088 | - |
dc.publisher.place | United States | - |