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Article: Improved performance of amorphous InGaZnO thin-film transistor by Hf incorporation in La2O3 gate dielectric

TitleImproved performance of amorphous InGaZnO thin-film transistor by Hf incorporation in La2O3 gate dielectric
Authors
KeywordsLogic gates
Thin film transistors
Dielectrics
Hafnium compounds
Electron traps
Issue Date2018
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298
Citation
IEEE Transactions on Device and Materials Reliability, 2018, v. 18 n. 3, p. 333-336 How to Cite?
AbstractThe effects of Hf incorporation in La 2 O 3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. With an appropriate dose of Hf, the device performance can be significantly improved, resulting in high saturation mobility of 30.5 cm 2 V -1 s -1 , small subthreshold slope of 0.15 V/dec, and negligible hysteresis (0.05 V). These improvements are attributed to suppressed crystallization and enhanced moisture resistance of the gate dielectric (supported by transmission electron microscopy and atomic force microscopy respectively), both induced by the Hf incorporation. However, excessive Hf incorporation leads to device degradation, likely due to more oxygen vacancies generated in the gate dielectric as shown by X-ray photoelectron spectroscopy.
Persistent Identifierhttp://hdl.handle.net/10722/278161
ISSN
2020 Impact Factor: 1.761
2020 SCImago Journal Rankings: 0.384
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorSONG, JQ-
dc.contributor.authorQIAN, LX-
dc.contributor.authorLai, PT-
dc.date.accessioned2019-10-04T08:08:40Z-
dc.date.available2019-10-04T08:08:40Z-
dc.date.issued2018-
dc.identifier.citationIEEE Transactions on Device and Materials Reliability, 2018, v. 18 n. 3, p. 333-336-
dc.identifier.issn1530-4388-
dc.identifier.urihttp://hdl.handle.net/10722/278161-
dc.description.abstractThe effects of Hf incorporation in La 2 O 3 gate dielectric on the electrical characteristics of amorphous InGaZnO thin-film transistor are studied. With an appropriate dose of Hf, the device performance can be significantly improved, resulting in high saturation mobility of 30.5 cm 2 V -1 s -1 , small subthreshold slope of 0.15 V/dec, and negligible hysteresis (0.05 V). These improvements are attributed to suppressed crystallization and enhanced moisture resistance of the gate dielectric (supported by transmission electron microscopy and atomic force microscopy respectively), both induced by the Hf incorporation. However, excessive Hf incorporation leads to device degradation, likely due to more oxygen vacancies generated in the gate dielectric as shown by X-ray photoelectron spectroscopy.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=7298-
dc.relation.ispartofIEEE Transactions on Device and Materials Reliability-
dc.rightsIEEE Transactions on Device and Materials Reliability. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectLogic gates-
dc.subjectThin film transistors-
dc.subjectDielectrics-
dc.subjectHafnium compounds-
dc.subjectElectron traps-
dc.titleImproved performance of amorphous InGaZnO thin-film transistor by Hf incorporation in La2O3 gate dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TDMR.2018.2840881-
dc.identifier.scopuseid_2-s2.0-85047633164-
dc.identifier.hkuros306902-
dc.identifier.volume18-
dc.identifier.issue3-
dc.identifier.spage333-
dc.identifier.epage336-
dc.identifier.isiWOS:000443837400001-
dc.publisher.placeUnited States-
dc.identifier.issnl1530-4388-

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