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Article: Moisture-absorption-free LaTaON as gate dielectric of Ge MOS devices

TitleMoisture-absorption-free LaTaON as gate dielectric of Ge MOS devices
Authors
KeywordsGe MOS
LaTaON dielectric
Hygroscopic property
Interface quality
Issue Date2019
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc
Citation
Applied Surface Science, 2019, v. 467-468, p. 462-466 How to Cite?
AbstractIn order to improve the hygroscopic property of LaON and also maintain its excellent interface quality with Ge, LaON incorporated with Ta is proposed and its hygroscopic and electrical properties are investigated by using dry and wet annealing. It is found that large improvement in hygroscopic property can be obtained by the Ta incorporation, and also the LaTaON film exhibits excellent interface quality with the Ge substrate due to the capability of TaON in blocking elemental inter-diffusions and also the passivation effect of LaGeOxNy formed at the LaTaON/Ge interface. Therefore, LaTaON can be considered as a high-quality gate dielectric in Ge MOS device to achieve excellent interfacial and electrical properties, e.g. in this work: high k value (21.0), low interface-state density (5.94 × 1011 cm−2 eV−1), low gate leakage current (3.07 × 10−4 A/cm2 at Vg = Vfb + 1 V) and high resistance against moisture absorption.
Persistent Identifierhttp://hdl.handle.net/10722/278167
ISSN
2019 Impact Factor: 6.182
2015 SCImago Journal Rankings: 0.930
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorCHENG, ZX-
dc.contributor.authorXU, JP-
dc.contributor.authorHUANG, Y-
dc.contributor.authorLai, PT-
dc.contributor.authorTANG, WM-
dc.date.accessioned2019-10-04T08:08:46Z-
dc.date.available2019-10-04T08:08:46Z-
dc.date.issued2019-
dc.identifier.citationApplied Surface Science, 2019, v. 467-468, p. 462-466-
dc.identifier.issn0169-4332-
dc.identifier.urihttp://hdl.handle.net/10722/278167-
dc.description.abstractIn order to improve the hygroscopic property of LaON and also maintain its excellent interface quality with Ge, LaON incorporated with Ta is proposed and its hygroscopic and electrical properties are investigated by using dry and wet annealing. It is found that large improvement in hygroscopic property can be obtained by the Ta incorporation, and also the LaTaON film exhibits excellent interface quality with the Ge substrate due to the capability of TaON in blocking elemental inter-diffusions and also the passivation effect of LaGeOxNy formed at the LaTaON/Ge interface. Therefore, LaTaON can be considered as a high-quality gate dielectric in Ge MOS device to achieve excellent interfacial and electrical properties, e.g. in this work: high k value (21.0), low interface-state density (5.94 × 1011 cm−2 eV−1), low gate leakage current (3.07 × 10−4 A/cm2 at Vg = Vfb + 1 V) and high resistance against moisture absorption.-
dc.languageeng-
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc-
dc.relation.ispartofApplied Surface Science-
dc.subjectGe MOS-
dc.subjectLaTaON dielectric-
dc.subjectHygroscopic property-
dc.subjectInterface quality-
dc.titleMoisture-absorption-free LaTaON as gate dielectric of Ge MOS devices-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.apsusc.2018.10.158-
dc.identifier.scopuseid_2-s2.0-85055477838-
dc.identifier.hkuros306908-
dc.identifier.volume467-468-
dc.identifier.spage462-
dc.identifier.epage466-
dc.identifier.isiWOS:000451023500056-
dc.publisher.placeNetherlands-
dc.identifier.issnl0169-4332-

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