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Article: Advances in La-Based High-k Dielectrics for MOS Applications

TitleAdvances in La-Based High-k Dielectrics for MOS Applications
Authors
Keywordslanthanum oxide
high-k dielectric
metal-oxide-semiconductor
Issue Date2019
PublisherMDPI AG. The Journal's web site is located at http://www.mdpi.com/journal/coatings
Citation
Coatings, 2019, v. 9 n. 4, p. article no. 217 How to Cite?
AbstractThis paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.
Persistent Identifierhttp://hdl.handle.net/10722/278170
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.493
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorTANG, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2019-10-04T08:08:49Z-
dc.date.available2019-10-04T08:08:49Z-
dc.date.issued2019-
dc.identifier.citationCoatings, 2019, v. 9 n. 4, p. article no. 217-
dc.identifier.issn2079-6412-
dc.identifier.urihttp://hdl.handle.net/10722/278170-
dc.description.abstractThis paper reviews the studies on La-based high-k dielectrics for metal-oxide-semiconductor (MOS) applications in recent years. According to the analyses of the physical and chemical characteristics of La2O3, its hygroscopicity and defects (oxygen vacancies, oxygen interstitials, interface states, and grain boundary states) are the main problems for high-performance devices. Reports show that post-deposition treatments (high temperature, laser), nitrogen incorporation and doping by other high-k material are capable of solving these problems. On the other hand, doping La into other high-k oxides can effectively passivate their oxygen vacancies and improve the threshold voltages of relevant MOS devices, thus improving the device performance. Investigations on MOS devices including non-volatile memory, MOS field-effect transistor, thin-film transistor, and novel devices (FinFET and nanowire-based transistor) suggest that La-based high-k dielectrics have high potential to fulfill the high-performance requirements in future MOS applications.-
dc.languageeng-
dc.publisherMDPI AG. The Journal's web site is located at http://www.mdpi.com/journal/coatings-
dc.relation.ispartofCoatings-
dc.rightsThis work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.-
dc.subjectlanthanum oxide-
dc.subjecthigh-k dielectric-
dc.subjectmetal-oxide-semiconductor-
dc.titleAdvances in La-Based High-k Dielectrics for MOS Applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.3390/coatings9040217-
dc.identifier.scopuseid_2-s2.0-85068992291-
dc.identifier.hkuros306911-
dc.identifier.volume9-
dc.identifier.issue4-
dc.identifier.spagearticle no. 217-
dc.identifier.epagearticle no. 217-
dc.identifier.isiWOS:000467318800004-
dc.publisher.placeSwitzerland-
dc.identifier.issnl2079-6412-

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