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Article: Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer

TitleImproved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer
Authors
KeywordsOXIDE-SEMICONDUCTOR DEVICES
SURFACE PASSIVATION
THIN-FILMS
XPS
GERMANIUM
Issue Date2017
PublisherAIP Publishing LLC. The Journal's web site is located at http://scitation.aip.org/content/aip/journal/apl
Citation
Applied Physics Letters, 2017, v. 111 n. 5, p. article no. 053501 How to Cite?
AbstractA Ge metal-oxide-semiconductor capacitor with a composite gate dielectric composed of a ZrON/TaON multilayer and a Si passivation layer treated with fluorine plasma is fabricated. Its interfacial and electrical properties are compared with those of its counterparts without the Si passivation layer or the fluorine-plasma treatment. Experimental results show that the device with the fluorinated Si passivation layer exhibits excellent interfacial and electrical performances: low interface-state density (2.0 × 1011 cm2 eV−1 at midgap), small flatband voltage (0.17 V), low gate leakage current (2.04 × 10−6 A/cm2 at Vg = Vfb + 1 V), and high equivalent dielectric constant (22.6). The involved mechanism lies in the fact that the TaSiON interlayer formed by mixing of TaON and Si passivation layers can effectively suppress the growth of unstable Ge oxides to reduce the defective states at/near the TaSiON/Ge interface. Moreover, the fluorine-plasma treatment can passivate the oxygen vacancies and conduce to the blocking of elemental inter-diffusions, thus largely improving the interfacial quality to achieve excellent electrical properties for the device. This work was financially supported mainly by the National Natural Science Foundation of China (Grant Nos. 61274112, 61176100, and 61404055), in part by the University Development Fund of the University of Hong Kong under Grant No. 00600009, and in part by the RGC of HKSAR, China (Project No. PolyU 252013/14E) and the University Development Fund of the Hong Kong Polytechnic University under Grant No. 1-ZVB1.
DescriptionWOS:000406782300021
Persistent Identifierhttp://hdl.handle.net/10722/278172
ISSN
2019 Impact Factor: 3.597
2015 SCImago Journal Rankings: 1.105
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorHUANG, Y-
dc.contributor.authorXU, JP-
dc.contributor.authorLIU, L-
dc.contributor.authorCHENG, ZX-
dc.contributor.authorLai, PT-
dc.contributor.authorTANG, WM-
dc.date.accessioned2019-10-04T08:08:51Z-
dc.date.available2019-10-04T08:08:51Z-
dc.date.issued2017-
dc.identifier.citationApplied Physics Letters, 2017, v. 111 n. 5, p. article no. 053501-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/278172-
dc.descriptionWOS:000406782300021-
dc.description.abstractA Ge metal-oxide-semiconductor capacitor with a composite gate dielectric composed of a ZrON/TaON multilayer and a Si passivation layer treated with fluorine plasma is fabricated. Its interfacial and electrical properties are compared with those of its counterparts without the Si passivation layer or the fluorine-plasma treatment. Experimental results show that the device with the fluorinated Si passivation layer exhibits excellent interfacial and electrical performances: low interface-state density (2.0 × 1011 cm2 eV−1 at midgap), small flatband voltage (0.17 V), low gate leakage current (2.04 × 10−6 A/cm2 at Vg = Vfb + 1 V), and high equivalent dielectric constant (22.6). The involved mechanism lies in the fact that the TaSiON interlayer formed by mixing of TaON and Si passivation layers can effectively suppress the growth of unstable Ge oxides to reduce the defective states at/near the TaSiON/Ge interface. Moreover, the fluorine-plasma treatment can passivate the oxygen vacancies and conduce to the blocking of elemental inter-diffusions, thus largely improving the interfacial quality to achieve excellent electrical properties for the device. This work was financially supported mainly by the National Natural Science Foundation of China (Grant Nos. 61274112, 61176100, and 61404055), in part by the University Development Fund of the University of Hong Kong under Grant No. 00600009, and in part by the RGC of HKSAR, China (Project No. PolyU 252013/14E) and the University Development Fund of the Hong Kong Polytechnic University under Grant No. 1-ZVB1.-
dc.languageeng-
dc.publisherAIP Publishing LLC. The Journal's web site is located at http://scitation.aip.org/content/aip/journal/apl-
dc.relation.ispartofApplied Physics Letters-
dc.subjectOXIDE-SEMICONDUCTOR DEVICES-
dc.subjectSURFACE PASSIVATION-
dc.subjectTHIN-FILMS-
dc.subjectXPS-
dc.subjectGERMANIUM-
dc.titleImproved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.4996722-
dc.identifier.scopuseid_2-s2.0-85027281317-
dc.identifier.hkuros306914-
dc.identifier.volume111-
dc.identifier.issue5-
dc.identifier.spagearticle no. 053501-
dc.identifier.epagearticle no. 053501-
dc.identifier.isiWOS:000406782300021-
dc.publisher.placeUnited States-
dc.identifier.issnl0003-6951-

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