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Conference Paper: Improvement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric

TitleImprovement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric
Authors
KeywordsFluorine plasma treatment
HfO
Ion-implantation
Organic thin-film transistors
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853
Citation
Proceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3 How to Cite?
AbstractImprovement in the performance of pentacene organic thin-film transistor has been demonstrated by using fluorine plasma-treated or ion-implanted HfO 2as its gate dielectric. The carrier mobility of the OTFT on HfO 2with 900-s plasma treatment can reach a carrier mobility of 0.662 cm 2 /Vs, about 7 times higher than that of the control sample without fluorine incorporation. The reason is larger pentacene grains due to trap passivation, smoother surface and higher surface energy. On the other hand, the carrier mobility of the OTFT on HfO 2with a fluorine implant dose of (1 ×10) 14 /cm 2is improved to 0.251 cm 2 /Vs, about 2.7 times higher than that of the control sample. The smoother surface of the gate dielectric with fluorine implant results in the growth of larger pentacene grains, leading to an increase of carrier mobility. However, excessive fluorine implant dose or plasma treatment time could cause damage to the gate dielectric, thus decreasing the carrier mobility of the device.
Persistent Identifierhttp://hdl.handle.net/10722/278342
ISBN

 

DC FieldValueLanguage
dc.contributor.authorHan, CY-
dc.contributor.authorTang, WM-
dc.contributor.authorLai, PT-
dc.date.accessioned2019-10-04T08:12:09Z-
dc.date.available2019-10-04T08:12:09Z-
dc.date.issued2019-
dc.identifier.citationProceedings of 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), Xi'an, China, 12-14 June 2019, p. 1-3-
dc.identifier.isbn978-1-7281-0287-0-
dc.identifier.urihttp://hdl.handle.net/10722/278342-
dc.description.abstractImprovement in the performance of pentacene organic thin-film transistor has been demonstrated by using fluorine plasma-treated or ion-implanted HfO 2as its gate dielectric. The carrier mobility of the OTFT on HfO 2with 900-s plasma treatment can reach a carrier mobility of 0.662 cm 2 /Vs, about 7 times higher than that of the control sample without fluorine incorporation. The reason is larger pentacene grains due to trap passivation, smoother surface and higher surface energy. On the other hand, the carrier mobility of the OTFT on HfO 2with a fluorine implant dose of (1 ×10) 14 /cm 2is improved to 0.251 cm 2 /Vs, about 2.7 times higher than that of the control sample. The smoother surface of the gate dielectric with fluorine implant results in the growth of larger pentacene grains, leading to an increase of carrier mobility. However, excessive fluorine implant dose or plasma treatment time could cause damage to the gate dielectric, thus decreasing the carrier mobility of the device.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/conhome.jsp?punumber=1000853-
dc.relation.ispartofIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)-
dc.rightsIEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC). Copyright © IEEE.-
dc.rights©2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectFluorine plasma treatment-
dc.subjectHfO-
dc.subjectIon-implantation-
dc.subjectOrganic thin-film transistors-
dc.titleImprovement of Pentacene Organic Thin-Film Transistor by Using Fluorine Plasma-Treated or Ion-Implanted HfO2 as Gate Dielectric-
dc.typeConference_Paper-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.identifier.doi10.1109/EDSSC.2019.8753963-
dc.identifier.scopuseid_2-s2.0-85070731573-
dc.identifier.hkuros306919-
dc.identifier.spage1-
dc.identifier.epage3-
dc.publisher.placeUnited States-

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