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- Publisher Website: 10.1117/12.2507699
- Scopus: eid_2-s2.0-85065786762
- WOS: WOS:000485092700020
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Conference Paper: GaN monolithic integration for lighting and display
Title | GaN monolithic integration for lighting and display |
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Authors | |
Keywords | Display GaN Integration LEDs Lighting |
Issue Date | 2019 |
Publisher | SPIE - International Society for Optical Engineering. The Proceedings' web site is located at https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918.toc |
Citation | Proceedings of SPIE Photonics West: Gallium Nitride Materials and Devices 2019, San Francisco, USA, 4-7 February 2019, v. 10918, paper no. 109181O How to Cite? |
Abstract | Light-emitting diodes based on InGaN/GaN quantum wells are widely used for lighting and display applications. However, such LEDs are monochromatic with relatively narrow spectral line-widths and without color-tuning capabilities. In order to use them for lighting, additional color-conversion material, typically phosphor, is needed. For display applications, multiple chips are required for color-tuning. The highly-strained nature of the InGaN/GaN wells due to lattice and thermal mismatch, especially for those of longer emission wavelengths, offer a viable way of wavelength tuning. Through dimensional downsizing of the emitters, the emission wavelengths can be blue-shifted via the strain-relaxation effect. Such wavelength tuning techniques can be exploited for the development of monolithic broadband LEDs for lighting, as well as RGB pixelated arrays for display applications, potentially offering improvements to performances, as well as manufacturing costs and yields. |
Description | Volume 10918 title: Gallium Nitride Materials and Devices XIV |
Persistent Identifier | http://hdl.handle.net/10722/279230 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Choi, HW | - |
dc.contributor.author | Fu, WY | - |
dc.contributor.author | Li, KH | - |
dc.contributor.author | Cheung, YF | - |
dc.date.accessioned | 2019-10-22T04:44:25Z | - |
dc.date.available | 2019-10-22T04:44:25Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Proceedings of SPIE Photonics West: Gallium Nitride Materials and Devices 2019, San Francisco, USA, 4-7 February 2019, v. 10918, paper no. 109181O | - |
dc.identifier.uri | http://hdl.handle.net/10722/279230 | - |
dc.description | Volume 10918 title: Gallium Nitride Materials and Devices XIV | - |
dc.description.abstract | Light-emitting diodes based on InGaN/GaN quantum wells are widely used for lighting and display applications. However, such LEDs are monochromatic with relatively narrow spectral line-widths and without color-tuning capabilities. In order to use them for lighting, additional color-conversion material, typically phosphor, is needed. For display applications, multiple chips are required for color-tuning. The highly-strained nature of the InGaN/GaN wells due to lattice and thermal mismatch, especially for those of longer emission wavelengths, offer a viable way of wavelength tuning. Through dimensional downsizing of the emitters, the emission wavelengths can be blue-shifted via the strain-relaxation effect. Such wavelength tuning techniques can be exploited for the development of monolithic broadband LEDs for lighting, as well as RGB pixelated arrays for display applications, potentially offering improvements to performances, as well as manufacturing costs and yields. | - |
dc.language | eng | - |
dc.publisher | SPIE - International Society for Optical Engineering. The Proceedings' web site is located at https://www.spiedigitallibrary.org/conference-proceedings-of-spie/10918.toc | - |
dc.relation.ispartof | SPIE Photonics West: Gallium Nitride Materials and Devices XIV, 10918 | - |
dc.subject | Display | - |
dc.subject | GaN | - |
dc.subject | Integration | - |
dc.subject | LEDs | - |
dc.subject | Lighting | - |
dc.title | GaN monolithic integration for lighting and display | - |
dc.type | Conference_Paper | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.email | Fu, WY: wyfu@hku.hk | - |
dc.identifier.email | Li, KH: khei@eee.hku.hk | - |
dc.identifier.email | Cheung, YF: yukfaira@hku.hk | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.identifier.authority | Li, KH=rp02142 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1117/12.2507699 | - |
dc.identifier.scopus | eid_2-s2.0-85065786762 | - |
dc.identifier.hkuros | 303057 | - |
dc.identifier.volume | 10918 | - |
dc.identifier.spage | paper no. 109181O | - |
dc.identifier.epage | paper no. 109181O | - |
dc.identifier.isi | WOS:000485092700020 | - |
dc.publisher.place | United States | - |