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- Publisher Website: 10.1016/j.pquantelec.2020.100247
- Scopus: eid_2-s2.0-85080984284
- WOS: WOS:000525924600001
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Article: Chip-scale GaN integration
Title | Chip-scale GaN integration |
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Authors | |
Keywords | GaN Monolithic integration Heterogeneous integration Micro-LED III-V semiconductor |
Issue Date | 2020 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe |
Citation | Progress in Quantum Electronics, 2020, v. 70, article no. 100247 How to Cite? |
Abstract | Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed. |
Persistent Identifier | http://hdl.handle.net/10722/286215 |
ISSN | 2023 Impact Factor: 7.4 2023 SCImago Journal Rankings: 2.348 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Li, KH | - |
dc.contributor.author | Fu, WY | - |
dc.contributor.author | Choi, HW | - |
dc.date.accessioned | 2020-08-31T07:00:46Z | - |
dc.date.available | 2020-08-31T07:00:46Z | - |
dc.date.issued | 2020 | - |
dc.identifier.citation | Progress in Quantum Electronics, 2020, v. 70, article no. 100247 | - |
dc.identifier.issn | 0079-6727 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286215 | - |
dc.description.abstract | Blue LEDs and HEMTs based on III-Nitride have been flourishing commercially across the globe, thanks largely to breakthroughs in the material quality of the wide-bandgap compound semiconductor back in the 1990s. The realizations of white-light LEDs, blu-ray systems, and lately efficient compact chargers have drastically changed the way we live and have contributed tremendously to global energy saving efforts. The maturity and diversity of modern discrete GaN-based devices open up opportunities for an integrated GaN platform with extended functionalities and applications. In this review paper, we present an overview of the monolithic and heterogeneous integration of GaN devices and components. Various methods for the integration of electronic, optoelectronic, and optical components based on GaN are discussed. | - |
dc.language | eng | - |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/pqe | - |
dc.relation.ispartof | Progress in Quantum Electronics | - |
dc.subject | GaN | - |
dc.subject | Monolithic integration | - |
dc.subject | Heterogeneous integration | - |
dc.subject | Micro-LED | - |
dc.subject | III-V semiconductor | - |
dc.title | Chip-scale GaN integration | - |
dc.type | Article | - |
dc.identifier.email | Fu, WY: wyfu@hku.hk | - |
dc.identifier.email | Choi, HW: hwchoi@hku.hk | - |
dc.identifier.authority | Li, KH=rp02142 | - |
dc.identifier.authority | Choi, HW=rp00108 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.pquantelec.2020.100247 | - |
dc.identifier.scopus | eid_2-s2.0-85080984284 | - |
dc.identifier.hkuros | 313746 | - |
dc.identifier.volume | 70 | - |
dc.identifier.spage | article no. 100247 | - |
dc.identifier.epage | article no. 100247 | - |
dc.identifier.isi | WOS:000525924600001 | - |
dc.publisher.place | United Kingdom | - |
dc.identifier.issnl | 0079-6727 | - |