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Article: Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires
Title | Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires |
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Authors | |
Issue Date | 2009 |
Citation | Journal of Applied Physics, 2009, v. 105, n. 9, article no. 094508 How to Cite? |
Abstract | In this paper, systematic study on electrical contacts to silicon nanowires (SiNWs) is performed using a developed Schottky barrier simulator. At room temperature, the SiNW-metal contact is always characterized by Schottky behaviors, with the barrier height exhibiting a minimum at a diameter of about 4 nm. At ultralow temperature of 138 K, a Schottky-Ohmic transition is found in SiNW, which originates from the limited extent of the depletion region in SiNW as a result of its small geometrical dimension. The generality of diameter dependent barrier heights for different material configurations, impacts of doping in SiNW, and interfacial oxide layer between the metal and SiNW is also studied to understand the influence of the SiNW size on the contact properties including Schottky barrier height, band profile, and specific contact resistance. © 2009 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/286847 |
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Wang, Zhong Rui | - |
dc.contributor.author | Zhang, Gang | - |
dc.contributor.author | Pey, Kin Leong | - |
dc.contributor.author | Tung, Chih Hang | - |
dc.contributor.author | Lo, Guo Qiang | - |
dc.date.accessioned | 2020-09-07T11:45:50Z | - |
dc.date.available | 2020-09-07T11:45:50Z | - |
dc.date.issued | 2009 | - |
dc.identifier.citation | Journal of Applied Physics, 2009, v. 105, n. 9, article no. 094508 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | http://hdl.handle.net/10722/286847 | - |
dc.description.abstract | In this paper, systematic study on electrical contacts to silicon nanowires (SiNWs) is performed using a developed Schottky barrier simulator. At room temperature, the SiNW-metal contact is always characterized by Schottky behaviors, with the barrier height exhibiting a minimum at a diameter of about 4 nm. At ultralow temperature of 138 K, a Schottky-Ohmic transition is found in SiNW, which originates from the limited extent of the depletion region in SiNW as a result of its small geometrical dimension. The generality of diameter dependent barrier heights for different material configurations, impacts of doping in SiNW, and interfacial oxide layer between the metal and SiNW is also studied to understand the influence of the SiNW size on the contact properties including Schottky barrier height, band profile, and specific contact resistance. © 2009 American Institute of Physics. | - |
dc.language | eng | - |
dc.relation.ispartof | Journal of Applied Physics | - |
dc.title | Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires | - |
dc.type | Article | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1063/1.3117490 | - |
dc.identifier.scopus | eid_2-s2.0-67249145119 | - |
dc.identifier.volume | 105 | - |
dc.identifier.issue | 9 | - |
dc.identifier.spage | article no. 094508 | - |
dc.identifier.epage | article no. 094508 | - |
dc.identifier.isi | WOS:000266263300168 | - |
dc.identifier.issnl | 0021-8979 | - |