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Conference Paper: High performance unipolar AlOy/HfOx/Ni based RRAM compatible with Si diodes for 3D application

TitleHigh performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application
Authors
Issue Date2011
PublisherIEEE. The Conference Proceedings' web site is located at https://ieeexplore.ieee.org/xpl/conhome/5976318/proceeding
Citation
2011 Symposium on VLSI Technology, Honolulu, HI, 14-16 June 2011. In 2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p. 44-45 How to Cite?
AbstractWe report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ∼10 5; 2) ∼100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120°C), and high temperature operating stability (> 200°C) without threshold resistive switching; 6) a fast set/rest speed of ∼10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. © 2011 JSAP (Japan Society of Applied Physi.
Persistent Identifierhttp://hdl.handle.net/10722/286861
ISSN
2023 SCImago Journal Rankings: 0.911

 

DC FieldValueLanguage
dc.contributor.authorTran, X. A.-
dc.contributor.authorGao, B.-
dc.contributor.authorKang, J. F.-
dc.contributor.authorWu, L.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorFang, Z.-
dc.contributor.authorPey, K. L.-
dc.contributor.authorYeo, Y. C.-
dc.contributor.authorDu, A. Y.-
dc.contributor.authorNguyen, B. Y.-
dc.contributor.authorLi, M. F.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:52Z-
dc.date.available2020-09-07T11:45:52Z-
dc.date.issued2011-
dc.identifier.citation2011 Symposium on VLSI Technology, Honolulu, HI, 14-16 June 2011. In 2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p. 44-45-
dc.identifier.issn0743-1562-
dc.identifier.urihttp://hdl.handle.net/10722/286861-
dc.description.abstractWe report a high performance unipolar RRAM with Ni-electrode/HfO x/AlOy/p+-Si structure, compatible with Si-diode selector for 3D cross-bar implementation. Highlights of the demonstrated RRAM include 1) a high on/off resistance ratio of ∼10 5; 2) ∼100% device yield on a 6-inch wafer; 3) excellent cycle-to-cycle and device-to-device uniformity of switching parameters (e.g. Vset, Vreset, and HRS/LRS currents); 4) satisfactory pulse switching endurance (> 106 cycles); 5) high temperature retention (>105 s @ 120°C), and high temperature operating stability (> 200°C) without threshold resistive switching; 6) a fast set/rest speed of ∼10/30 ns; 7) full CMOS compatible materials and process: with p +-Si bottom electrode, avoiding the use of noble metals, e.g. Pt. © 2011 JSAP (Japan Society of Applied Physi.-
dc.languageeng-
dc.publisherIEEE. The Conference Proceedings' web site is located at https://ieeexplore.ieee.org/xpl/conhome/5976318/proceeding-
dc.relation.ispartof2011 Symposium on VLSI Technology - Digest of Technical Papers-
dc.titleHigh performance unipolar AlO<inf>y</inf>/HfO<inf>x</inf>/Ni based RRAM compatible with Si diodes for 3D application-
dc.typeConference_Paper-
dc.identifier.scopuseid_2-s2.0-80052662353-
dc.identifier.spage44-
dc.identifier.epage45-
dc.identifier.issnl0743-1562-

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