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Article: Mechanism of different switching directions in graphene oxide based RRAM

TitleMechanism of different switching directions in graphene oxide based RRAM
Authors
Wang, ZhongruiTjoa, V.Wu, L.Liu, W. J.Fang, Z.Tran, X. A.Wei, J.Zhu, W. G.Yu, H. Y.
Issue Date2012
Citation
Journal of the Electrochemical Society, 2012, v. 159, n. 6, article no. K177 How to Cite?
DOI: http://dx.doi.org/10.1149/2.068206jes
AbstractResistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO. © 2012 The Electrochemical Society.
Persistent Identifierhttp://hdl.handle.net/10722/286865
ISSN
0013-4651
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.868
ISI Accession Number ID
WOS:000304140700089

 

DC FieldValueLanguage
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorTjoa, V.-
dc.contributor.authorWu, L.-
dc.contributor.authorLiu, W. J.-
dc.contributor.authorFang, Z.-
dc.contributor.authorTran, X. A.-
dc.contributor.authorWei, J.-
dc.contributor.authorZhu, W. G.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:52Z-
dc.date.available2020-09-07T11:45:52Z-
dc.date.issued2012-
dc.identifier.citationJournal of the Electrochemical Society, 2012, v. 159, n. 6, article no. K177-
dc.identifier.issn0013-4651-
dc.identifier.urihttp://hdl.handle.net/10722/286865-
dc.description.abstractResistive switching in Graphene Oxide (GO) based RRAM has been studied in combination with various commonly used electrodes e.g. Al, Cu, Ni and Ti. For the first time, coexistence of different reproducible switching directions has been observed in the Al/GO/Pt and the Ti/GO/Pt RRAM cells. These switching directions are correlated to the underlying switching mechanisms as revealed by field dependence, temperature dependence and area dependence. Our observation also suggests that both oxygen related functional groups absorptionrelease and electrode metal ions diffusion play important roles in bipolar resistive switching of GO. © 2012 The Electrochemical Society.-
dc.languageeng-
dc.relation.ispartofJournal of the Electrochemical Society-
dc.titleMechanism of different switching directions in graphene oxide based RRAM-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1149/2.068206jes-
dc.identifier.scopuseid_2-s2.0-84861401706-
dc.identifier.volume159-
dc.identifier.issue6-
dc.identifier.spagearticle no. K177-
dc.identifier.epagearticle no. K177-
dc.identifier.isiWOS:000304140700089-
dc.identifier.issnl0013-4651-

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