V<inf>th</inf> shift in single-layer graphene field-effect transistors and its correlation with raman inspection

Abstract

Raman measurement is carried out to understand V th shift in single-layer graphene field-effect transistors (GFETs). The G (2D) peak shift in Raman spectra is correlated to the corresponding ΔV th during stress and recovery phases. A blue (red) shift of G and 2D peaks is seen during stress (recovery) phase, indicating the corresponding trapping (detrapping) effects in the graphene device. It is interesting to note that, after forming gas annealing (H 2/Ar), the defects can be generated in graphene (evidenced by D peak of Raman spectra), leading to the increased ΔV th for both negative bias temperature instability and positive bias temperature instability in single-layer GFETs. © 2012 IEEE.