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Article: A self-rectifying HfOx-based unipolar RRAM with Nisi electrode

TitleA self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode
Authors
Tran, X. A.Zhu, W. G.Gao, B.Kang, J. F.Liu, W. J.Fang, Z.Wang, Z. R.Yeo, Y. C.Nguyen, B. Y.Li, M. F.Yu, H. Y.
Keywordsresistive switching
Resistive random access memory (RAM) (RRAM)
self-rectify
unipolar
Issue Date2012
Citation
IEEE Electron Device Letters, 2012, v. 33, n. 4, p. 585-587 How to Cite?
DOI: http://dx.doi.org/10.1109/LED.2011.2181971
AbstractIn this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (<10 3 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (<10 2) and good retention characteristics (<10s at 125 °C ) and 4) wide readout margin for high-density cross-point memory devices (number of word lines 10 6 for the worst case condition). © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286870
ISSN
0741-3106
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID
WOS:000302232900040

 

DC FieldValueLanguage
dc.contributor.authorTran, X. A.-
dc.contributor.authorZhu, W. G.-
dc.contributor.authorGao, B.-
dc.contributor.authorKang, J. F.-
dc.contributor.authorLiu, W. J.-
dc.contributor.authorFang, Z.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorYeo, Y. C.-
dc.contributor.authorNguyen, B. Y.-
dc.contributor.authorLi, M. F.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:53Z-
dc.date.available2020-09-07T11:45:53Z-
dc.date.issued2012-
dc.identifier.citationIEEE Electron Device Letters, 2012, v. 33, n. 4, p. 585-587-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/286870-
dc.description.abstractIn this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (<10 3 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (<10 2) and good retention characteristics (<10s at 125 °C ) and 4) wide readout margin for high-density cross-point memory devices (number of word lines 10 6 for the worst case condition). © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectresistive switching-
dc.subjectResistive random access memory (RAM) (RRAM)-
dc.subjectself-rectify-
dc.subjectunipolar-
dc.titleA self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2181971-
dc.identifier.scopuseid_2-s2.0-84862787919-
dc.identifier.volume33-
dc.identifier.issue4-
dc.identifier.spage585-
dc.identifier.epage587-
dc.identifier.isiWOS:000302232900040-
dc.identifier.issnl0741-3106-

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