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Article: A self-rectifying HfOx-based unipolar RRAM with Nisi electrode

TitleA self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode
Authors
Keywordsresistive switching
Resistive random access memory (RAM) (RRAM)
self-rectify
unipolar
Issue Date2012
Citation
IEEE Electron Device Letters, 2012, v. 33, n. 4, p. 585-587 How to Cite?
AbstractIn this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (<10 3 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (<10 2) and good retention characteristics (<10s at 125 °C ) and 4) wide readout margin for high-density cross-point memory devices (number of word lines 10 6 for the worst case condition). © 2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286870
ISSN
2023 Impact Factor: 4.1
2023 SCImago Journal Rankings: 1.250
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorTran, X. A.-
dc.contributor.authorZhu, W. G.-
dc.contributor.authorGao, B.-
dc.contributor.authorKang, J. F.-
dc.contributor.authorLiu, W. J.-
dc.contributor.authorFang, Z.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorYeo, Y. C.-
dc.contributor.authorNguyen, B. Y.-
dc.contributor.authorLi, M. F.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:53Z-
dc.date.available2020-09-07T11:45:53Z-
dc.date.issued2012-
dc.identifier.citationIEEE Electron Device Letters, 2012, v. 33, n. 4, p. 585-587-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/286870-
dc.description.abstractIn this letter, a unipolar resistive switching random access memory (RAM) based on NiSi/HfO xTiN structure is demonstrated, which is compatible with NiSi S/D in advance CMOS technology process. Highlights of the demonstrated resistive RAM include the following: 1) CMOS-technology-friendly materials and process; 2) excellent self-rectifying behavior in low-resistance state (<10 3 at 1 V); 3) well-behaved memory performance, such as high on/off resistance ratio (<10 2) and good retention characteristics (<10s at 125 °C ) and 4) wide readout margin for high-density cross-point memory devices (number of word lines 10 6 for the worst case condition). © 2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Electron Device Letters-
dc.subjectresistive switching-
dc.subjectResistive random access memory (RAM) (RRAM)-
dc.subjectself-rectify-
dc.subjectunipolar-
dc.titleA self-rectifying HfO<inf>x</inf>-based unipolar RRAM with Nisi electrode-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2011.2181971-
dc.identifier.scopuseid_2-s2.0-84862787919-
dc.identifier.volume33-
dc.identifier.issue4-
dc.identifier.spage585-
dc.identifier.epage587-
dc.identifier.isiWOS:000302232900040-
dc.identifier.issnl0741-3106-

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