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Conference Paper: Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

TitleSelf-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials
Authors
Tran, X. A.Gao, B.Kang, J. F.Wu, X.Wu, L.Fang, Z.Wang, Z. R.Pey, K. L.Yeo, Y. C.Du, A. Y.Liu, M.Nguyen, B. Y.Li, M. F.Yu, H. Y.
Issue Date2011
Citation
Technical Digest - International Electron Devices Meeting, IEDM, 2011 How to Cite?
DOI: http://dx.doi.org/10.1109/IEDM.2011.6131648
AbstractIn this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition). © 2011 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286873
ISSN
0163-1918
2023 SCImago Journal Rankings: 1.047

 

DC FieldValueLanguage
dc.contributor.authorTran, X. A.-
dc.contributor.authorGao, B.-
dc.contributor.authorKang, J. F.-
dc.contributor.authorWu, X.-
dc.contributor.authorWu, L.-
dc.contributor.authorFang, Z.-
dc.contributor.authorWang, Z. R.-
dc.contributor.authorPey, K. L.-
dc.contributor.authorYeo, Y. C.-
dc.contributor.authorDu, A. Y.-
dc.contributor.authorLiu, M.-
dc.contributor.authorNguyen, B. Y.-
dc.contributor.authorLi, M. F.-
dc.contributor.authorYu, H. Y.-
dc.date.accessioned2020-09-07T11:45:54Z-
dc.date.available2020-09-07T11:45:54Z-
dc.date.issued2011-
dc.identifier.citationTechnical Digest - International Electron Devices Meeting, IEDM, 2011-
dc.identifier.issn0163-1918-
dc.identifier.urihttp://hdl.handle.net/10722/286873-
dc.description.abstractIn this paper, we report a high performance, forming-free and self-rectifying unipolar HfO x based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>10 3 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >10 6 for worst case condition). © 2011 IEEE.-
dc.languageeng-
dc.relation.ispartofTechnical Digest - International Electron Devices Meeting, IEDM-
dc.titleSelf-rectifying and forming-free unipolar HfO<inf>x</inf> based-high performance RRAM built by fab-avaialbe materials-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/IEDM.2011.6131648-
dc.identifier.scopuseid_2-s2.0-84863037379-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.issnl0163-1918-

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