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Article: Observation of the ambient effect in BTI characteristics of back-gated single layer graphene field effect transistors

TitleObservation of the ambient effect in BTI characteristics of back-gated single layer graphene field effect transistors
Authors
KeywordsPositive bias temperature instability (PBTI)
Field effect transistors (FETs)
Negative bias temperature instability (NBTI)
Graphene
Doping
Issue Date2013
Citation
IEEE Transactions on Electron Devices, 2013, v. 60, n. 8, p. 2682-2686 How to Cite?
AbstractIn this paper, the ambient doping effect on negative/positive bias temperature instability (NBTI/PBTI) of single layer graphene field effect transistors (FETs) is investigated. In ambient air, the ΔVth of NBTI is comparable with that of PBTI under the same stress voltage at room temperature. The ΔVth of NBTI appears insensitive to temperature, while the ΔVth of PBTI increases significantly with rising temperatures, due to the thermally activated charging of ambient doped defects at the graphene/SiO2 interface. This effect also results in an abnormal recovery of NBTI. In an ambient vacuum, the ΔV th is much less than that in ambient air. In addition, the ΔVth of both NBTI and PBTI decreases substantially for higher temperatures in the vacuum. The adsorbed molecules are mainly responsible for the ΔVth under BTI stress and the back-gated graphene FETs in the air. © 1963-2012 IEEE.
Persistent Identifierhttp://hdl.handle.net/10722/286879
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLiu, Wen Jun-
dc.contributor.authorSun, Xiao Wei-
dc.contributor.authorTran, Xuan Anh-
dc.contributor.authorFang, Zheng-
dc.contributor.authorWang, Zhong Rui-
dc.contributor.authorWang, Fei-
dc.contributor.authorWu, Ling-
dc.contributor.authorZhang, J. F.-
dc.contributor.authorWei, Jun-
dc.contributor.authorZhu, Hui Long-
dc.contributor.authorYu, Hong Yu-
dc.date.accessioned2020-09-07T11:45:54Z-
dc.date.available2020-09-07T11:45:54Z-
dc.date.issued2013-
dc.identifier.citationIEEE Transactions on Electron Devices, 2013, v. 60, n. 8, p. 2682-2686-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/286879-
dc.description.abstractIn this paper, the ambient doping effect on negative/positive bias temperature instability (NBTI/PBTI) of single layer graphene field effect transistors (FETs) is investigated. In ambient air, the ΔVth of NBTI is comparable with that of PBTI under the same stress voltage at room temperature. The ΔVth of NBTI appears insensitive to temperature, while the ΔVth of PBTI increases significantly with rising temperatures, due to the thermally activated charging of ambient doped defects at the graphene/SiO2 interface. This effect also results in an abnormal recovery of NBTI. In an ambient vacuum, the ΔV th is much less than that in ambient air. In addition, the ΔVth of both NBTI and PBTI decreases substantially for higher temperatures in the vacuum. The adsorbed molecules are mainly responsible for the ΔVth under BTI stress and the back-gated graphene FETs in the air. © 1963-2012 IEEE.-
dc.languageeng-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.subjectPositive bias temperature instability (PBTI)-
dc.subjectField effect transistors (FETs)-
dc.subjectNegative bias temperature instability (NBTI)-
dc.subjectGraphene-
dc.subjectDoping-
dc.titleObservation of the ambient effect in BTI characteristics of back-gated single layer graphene field effect transistors-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2013.2267541-
dc.identifier.scopuseid_2-s2.0-84880883167-
dc.identifier.volume60-
dc.identifier.issue8-
dc.identifier.spage2682-
dc.identifier.epage2686-
dc.identifier.isiWOS:000322124100038-
dc.identifier.issnl0018-9383-

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