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Article: Low voltage resistive switching devices based on chemically produced silicon oxide

TitleLow voltage resistive switching devices based on chemically produced silicon oxide
Authors
Li, CanJiang, HaoXia, Qiangfei
Issue Date2013
Citation
Applied Physics Letters, 2013, v. 103, n. 6, article no. 062104 How to Cite?
DOI: http://dx.doi.org/10.1063/1.4817970
AbstractWe developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices. © 2013 AIP Publishing LLC.
Persistent Identifierhttp://hdl.handle.net/10722/286882
ISSN
0003-6951
2021 Impact Factor: 3.971
2020 SCImago Journal Rankings: 1.182
ISI Accession Number ID
WOS:000322908300038

 

DC FieldValueLanguage
dc.contributor.authorLi, Can-
dc.contributor.authorJiang, Hao-
dc.contributor.authorXia, Qiangfei-
dc.date.accessioned2020-09-07T11:45:55Z-
dc.date.available2020-09-07T11:45:55Z-
dc.date.issued2013-
dc.identifier.citationApplied Physics Letters, 2013, v. 103, n. 6, article no. 062104-
dc.identifier.issn0003-6951-
dc.identifier.urihttp://hdl.handle.net/10722/286882-
dc.description.abstractWe developed nonvolatile metal/SiOx/Si memristive devices based on ultrathin (∼1 nm) silicon oxide that was produced in a Piranha solution. The devices exhibited repeatable resistive switching behavior with low programming voltages (as low as 0.5 V) and high ON/OFF conductance ratio. Devices with active metals as top electrodes were bipolar switches, while those with inert metal electrodes were unipolar. We also studied the switching mechanisms for both types of devices based on the filament formation and rupture, and proposed conduction models for Pt/SiOx/Si devices. © 2013 AIP Publishing LLC.-
dc.languageeng-
dc.relation.ispartofApplied Physics Letters-
dc.titleLow voltage resistive switching devices based on chemically produced silicon oxide-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1063/1.4817970-
dc.identifier.scopuseid_2-s2.0-84881638223-
dc.identifier.volume103-
dc.identifier.issue6-
dc.identifier.spagearticle no. 062104-
dc.identifier.epagearticle no. 062104-
dc.identifier.isiWOS:000322908300038-
dc.identifier.issnl0003-6951-

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