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Conference Paper: Switching layer engineering for memristive devices

TitleSwitching layer engineering for memristive devices
Authors
Jiang, HaoLi, CanXia, Qiangfei
Keywordsbilayer devices
SiOx devices
switching layer
reactive sputtering
memristor
Issue Date2014
Citation
International Workshop on Cellular Nanoscale Networks and their Applications, 2014 How to Cite?
DOI: http://dx.doi.org/10.1109/CNNA.2014.6888616
Abstract© 2014 IEEE. We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide.
Persistent Identifierhttp://hdl.handle.net/10722/286896
ISSN
2165-0160
2020 SCImago Journal Rankings: 0.118

 

DC FieldValueLanguage
dc.contributor.authorJiang, Hao-
dc.contributor.authorLi, Can-
dc.contributor.authorXia, Qiangfei-
dc.date.accessioned2020-09-07T11:45:57Z-
dc.date.available2020-09-07T11:45:57Z-
dc.date.issued2014-
dc.identifier.citationInternational Workshop on Cellular Nanoscale Networks and their Applications, 2014-
dc.identifier.issn2165-0160-
dc.identifier.urihttp://hdl.handle.net/10722/286896-
dc.description.abstract© 2014 IEEE. We used reactive sputtering as a tool to deposit transition metal oxide materials with tunable chemical composition and electrical properties. We further developed heterogeneous bilayer memristive devices with designed switching properties. Finally, we developed a low voltage memristive based on chemically produced, 1 nm thick silicon oxide.-
dc.languageeng-
dc.relation.ispartofInternational Workshop on Cellular Nanoscale Networks and their Applications-
dc.subjectbilayer devices-
dc.subjectSiOx devices-
dc.subjectswitching layer-
dc.subjectreactive sputtering-
dc.subjectmemristor-
dc.titleSwitching layer engineering for memristive devices-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/CNNA.2014.6888616-
dc.identifier.scopuseid_2-s2.0-84907743599-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.eissn2165-0179-
dc.identifier.issnl2165-0160-

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