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Article: Anatomy of Ag/Hafnia-Based Selectors with 1010 Nonlinearity

TitleAnatomy of Ag/Hafnia-Based Selectors with 10<sup>10</sup> Nonlinearity
Authors
KeywordsMemory
Memristor nonlinearity
Neuromorphic computing
Selector
Issue Date2017
Citation
Advanced Materials, 2017, v. 29, n. 12, article no. 1604457 How to Cite?
AbstractResearchers report a new symmetric bidirectional threshold switching selector device with features such as high selectivity of 1010, steep turn on slope, high endurance beyond 108 cycles, and fast ON/OFF switch speed within 75/250 ns. The selector has been experimentally stacked on top of a Pd/Ta2O5/TaOx/Pd memristor to form an integrated 1S1R cell. Microscopic analysis of a nanoscale device reveals discontinuous Ag nanostructures in a device after switching along with noticeable structural deformation and nanocrystalline m-HfO2. A numerical switching model based on the thermal diffusion aided by bipolar electrode effects and the Gibbs-Thomson effect, or minimization of interfacial energy has been developed to quantitatively interpret the observed switching difference between asymmetric Pd/HfOx/Ag and symmetric Pd/Ag/HfOx/Ag/Pd threshold devices.
DescriptionAccepted manuscript is available on the publisher website.
Persistent Identifierhttp://hdl.handle.net/10722/286937
ISSN
2021 Impact Factor: 32.086
2020 SCImago Journal Rankings: 10.707
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorMidya, Rivu-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorZhang, Jiaming-
dc.contributor.authorSavel'ev, Sergey E.-
dc.contributor.authorLi, Can-
dc.contributor.authorRao, Mingyi-
dc.contributor.authorJang, Moon Hyung-
dc.contributor.authorJoshi, Saumil-
dc.contributor.authorJiang, Hao-
dc.contributor.authorLin, Peng-
dc.contributor.authorNorris, Kate-
dc.contributor.authorGe, Ning-
dc.contributor.authorWu, Qing-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorLi, Zhiyong-
dc.contributor.authorXin, Huolin L.-
dc.contributor.authorWilliams, R. Stanley-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, J. Joshua-
dc.date.accessioned2020-09-07T11:46:04Z-
dc.date.available2020-09-07T11:46:04Z-
dc.date.issued2017-
dc.identifier.citationAdvanced Materials, 2017, v. 29, n. 12, article no. 1604457-
dc.identifier.issn0935-9648-
dc.identifier.urihttp://hdl.handle.net/10722/286937-
dc.descriptionAccepted manuscript is available on the publisher website.-
dc.description.abstractResearchers report a new symmetric bidirectional threshold switching selector device with features such as high selectivity of 1010, steep turn on slope, high endurance beyond 108 cycles, and fast ON/OFF switch speed within 75/250 ns. The selector has been experimentally stacked on top of a Pd/Ta2O5/TaOx/Pd memristor to form an integrated 1S1R cell. Microscopic analysis of a nanoscale device reveals discontinuous Ag nanostructures in a device after switching along with noticeable structural deformation and nanocrystalline m-HfO2. A numerical switching model based on the thermal diffusion aided by bipolar electrode effects and the Gibbs-Thomson effect, or minimization of interfacial energy has been developed to quantitatively interpret the observed switching difference between asymmetric Pd/HfOx/Ag and symmetric Pd/Ag/HfOx/Ag/Pd threshold devices.-
dc.languageeng-
dc.relation.ispartofAdvanced Materials-
dc.subjectMemory-
dc.subjectMemristor nonlinearity-
dc.subjectNeuromorphic computing-
dc.subjectSelector-
dc.titleAnatomy of Ag/Hafnia-Based Selectors with 10<sup>10</sup> Nonlinearity-
dc.typeArticle-
dc.description.naturelink_to_OA_fulltext-
dc.identifier.doi10.1002/adma.201604457-
dc.identifier.pmid28134458-
dc.identifier.scopuseid_2-s2.0-85011076296-
dc.identifier.volume29-
dc.identifier.issue12-
dc.identifier.spagearticle no. 1604457-
dc.identifier.epagearticle no. 1604457-
dc.identifier.eissn1521-4095-
dc.identifier.isiWOS:000396998800004-
dc.identifier.issnl0935-9648-

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