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Article: Truly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths

TitleTruly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths
Authors
Keywordslow voltages
conductive tunneling paths
electroforming free
low currents
vertically integrated 1S1R
Issue Date2017
Citation
Advanced Functional Materials, 2017, v. 27, n. 35, article no. 1702010 How to Cite?
Abstract© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1S1R (1 selector and 1 memristor) is a laterally scalable and vertically stackable scheme that can lead to the ultimate memristor density for either memory or neural network applications. In such a scheme, the memristor device needs to be truly electroforming-free and operated at both low currents and low voltages in order to be compatible with a two-terminal selector. In this work, a new type of memristor with a preconditioned tunneling conductive path is developed to achieve the required performance characteristics, including truly electroforming-free, low current below 30 µA (potentially <1 µA), and simultaneously low voltage ≈±0.7 V in switching operations. Such memristors are further integrated with two types of recently developed selectors to demonstrate the feasibility of 1S1R integration.
Persistent Identifierhttp://hdl.handle.net/10722/286943
ISSN
2020 Impact Factor: 18.808
2020 SCImago Journal Rankings: 6.069
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYoon, Jung Ho-
dc.contributor.authorZhang, Jiaming-
dc.contributor.authorRen, Xiaochen-
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorWu, Huaqiang-
dc.contributor.authorLi, Zhiyong-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorWu, Qing-
dc.contributor.authorLauhon, Lincoln J.-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, J. Joshua-
dc.date.accessioned2020-09-07T11:46:05Z-
dc.date.available2020-09-07T11:46:05Z-
dc.date.issued2017-
dc.identifier.citationAdvanced Functional Materials, 2017, v. 27, n. 35, article no. 1702010-
dc.identifier.issn1616-301X-
dc.identifier.urihttp://hdl.handle.net/10722/286943-
dc.description.abstract© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 1S1R (1 selector and 1 memristor) is a laterally scalable and vertically stackable scheme that can lead to the ultimate memristor density for either memory or neural network applications. In such a scheme, the memristor device needs to be truly electroforming-free and operated at both low currents and low voltages in order to be compatible with a two-terminal selector. In this work, a new type of memristor with a preconditioned tunneling conductive path is developed to achieve the required performance characteristics, including truly electroforming-free, low current below 30 µA (potentially <1 µA), and simultaneously low voltage ≈±0.7 V in switching operations. Such memristors are further integrated with two types of recently developed selectors to demonstrate the feasibility of 1S1R integration.-
dc.languageeng-
dc.relation.ispartofAdvanced Functional Materials-
dc.subjectlow voltages-
dc.subjectconductive tunneling paths-
dc.subjectelectroforming free-
dc.subjectlow currents-
dc.subjectvertically integrated 1S1R-
dc.titleTruly Electroforming-Free and Low-Energy Memristors with Preconditioned Conductive Tunneling Paths-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1002/adfm.201702010-
dc.identifier.scopuseid_2-s2.0-85026664651-
dc.identifier.volume27-
dc.identifier.issue35-
dc.identifier.spagearticle no. 1702010-
dc.identifier.epagearticle no. 1702010-
dc.identifier.eissn1616-3028-
dc.identifier.isiWOS:000411027300004-
dc.identifier.issnl1616-301X-

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