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Conference Paper: Unconventional computing with diffusive memristors

TitleUnconventional computing with diffusive memristors
Authors
KeywordsDiffusive memristor
Threshold switch
Unconventional computing
Artificial synapse
Artificial neuron
Issue Date2018
Citation
Proceedings - IEEE International Symposium on Circuits and Systems, 2018, v. 2018-May How to Cite?
Abstract© 2018 IEEE. Diffusive memristors with Ag active metal species are volatile threshold switches featuring spontaneous rupture of conduction channels at small electrical bias. The unique temporal dynamics of the conductance evolution originates from the underlying electrochemical and diffusive dynamics of the active metals in dielectrics, which can be explored for a variety of novel applications in unconventional computing. The superior I-V nonlinearity enables large crossbar arrays for high density non-volatile memories. The relaxation dynamics and the delay dynamics of the conductance evolution lead to faithful synaptic emulators and single-device threshold logic neurons, respectively. Unsupervised learning has been demonstrated with a fully memristive neural network consisting of these artificial synapses and neurons for the first time. In addition, the intrinsic stochasticity of the delay mechanism has been used to realize a true random number generators for security solutions.
Persistent Identifierhttp://hdl.handle.net/10722/286977
ISSN
2020 SCImago Journal Rankings: 0.229

 

DC FieldValueLanguage
dc.contributor.authorWang, Zhongrui-
dc.contributor.authorMidya, Rivu-
dc.contributor.authorJoshi, Saumil-
dc.contributor.authorJiang, Hao-
dc.contributor.authorLi, Can-
dc.contributor.authorLin, Peng-
dc.contributor.authorSong, Wenhao-
dc.contributor.authorRao, Mingyi-
dc.contributor.authorLi, Yunning-
dc.contributor.authorBarnell, Mark-
dc.contributor.authorWu, Qing-
dc.contributor.authorXia, Qiangfei-
dc.contributor.authorYang, J. Joshua-
dc.date.accessioned2020-09-07T11:46:10Z-
dc.date.available2020-09-07T11:46:10Z-
dc.date.issued2018-
dc.identifier.citationProceedings - IEEE International Symposium on Circuits and Systems, 2018, v. 2018-May-
dc.identifier.issn0271-4310-
dc.identifier.urihttp://hdl.handle.net/10722/286977-
dc.description.abstract© 2018 IEEE. Diffusive memristors with Ag active metal species are volatile threshold switches featuring spontaneous rupture of conduction channels at small electrical bias. The unique temporal dynamics of the conductance evolution originates from the underlying electrochemical and diffusive dynamics of the active metals in dielectrics, which can be explored for a variety of novel applications in unconventional computing. The superior I-V nonlinearity enables large crossbar arrays for high density non-volatile memories. The relaxation dynamics and the delay dynamics of the conductance evolution lead to faithful synaptic emulators and single-device threshold logic neurons, respectively. Unsupervised learning has been demonstrated with a fully memristive neural network consisting of these artificial synapses and neurons for the first time. In addition, the intrinsic stochasticity of the delay mechanism has been used to realize a true random number generators for security solutions.-
dc.languageeng-
dc.relation.ispartofProceedings - IEEE International Symposium on Circuits and Systems-
dc.subjectDiffusive memristor-
dc.subjectThreshold switch-
dc.subjectUnconventional computing-
dc.subjectArtificial synapse-
dc.subjectArtificial neuron-
dc.titleUnconventional computing with diffusive memristors-
dc.typeConference_Paper-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/ISCAS.2018.8351882-
dc.identifier.scopuseid_2-s2.0-85057076933-
dc.identifier.volume2018-May-
dc.identifier.spagenull-
dc.identifier.epagenull-
dc.identifier.issnl0271-4310-

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