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- Publisher Website: 10.1016/j.apsusc.2019.03.139
- Scopus: eid_2-s2.0-85063194863
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Article: Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric
Title | Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric |
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Authors | |
Keywords | MoS2 FETs Al2O3 dielectric Plasma treatment Mobility |
Issue Date | 2019 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc |
Citation | Applied Surface Science, 2019, v. 481, p. 1028-1034 How to Cite? |
Abstract | ALD Al2O3 films treated respectively by N2, O2 and NH3 plasmas are used as gate dielectrics to fabricate few-layered MoS2 FETs. As compared with the control sample without any plasma treatment, the devices with different plasmas treatments achieve better electrical properties, with the NH3-treated device having the best results: highest carrier mobility of 39.3 cm2/Vs (~1.65 times higher than that of the control sample), smallest subthreshold swing of 90.9 mV/dec, largest on/off ratio of 1.5 × 107 and negligible hysteresis. These are attributed to the fact that the NH3 plasma treatment can (1) effectively passivate the oxygen vacancies in Al2O3 and decrease the dangling bonds at the Al2O3 surface, thus reducing the traps at/near the Al2O3/MoS2 interface; (2) increase the k value of the dielectric by N incorporation to enhance the screening effect on the Coulomb impurity scattering. In addition, these plasma treatments can adjust the MoS2 FET from depletion mode to enhancement mode by introducing negative ions into the gate dielectric. |
Persistent Identifier | http://hdl.handle.net/10722/287654 |
ISSN | 2023 Impact Factor: 6.3 2023 SCImago Journal Rankings: 1.210 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | SONG, X | - |
dc.contributor.author | XU, J | - |
dc.contributor.author | LIU, L | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | TANG, WM | - |
dc.date.accessioned | 2020-10-05T12:01:17Z | - |
dc.date.available | 2020-10-05T12:01:17Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | Applied Surface Science, 2019, v. 481, p. 1028-1034 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | http://hdl.handle.net/10722/287654 | - |
dc.description.abstract | ALD Al2O3 films treated respectively by N2, O2 and NH3 plasmas are used as gate dielectrics to fabricate few-layered MoS2 FETs. As compared with the control sample without any plasma treatment, the devices with different plasmas treatments achieve better electrical properties, with the NH3-treated device having the best results: highest carrier mobility of 39.3 cm2/Vs (~1.65 times higher than that of the control sample), smallest subthreshold swing of 90.9 mV/dec, largest on/off ratio of 1.5 × 107 and negligible hysteresis. These are attributed to the fact that the NH3 plasma treatment can (1) effectively passivate the oxygen vacancies in Al2O3 and decrease the dangling bonds at the Al2O3 surface, thus reducing the traps at/near the Al2O3/MoS2 interface; (2) increase the k value of the dielectric by N incorporation to enhance the screening effect on the Coulomb impurity scattering. In addition, these plasma treatments can adjust the MoS2 FET from depletion mode to enhancement mode by introducing negative ions into the gate dielectric. | - |
dc.language | eng | - |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/apsusc | - |
dc.relation.ispartof | Applied Surface Science | - |
dc.subject | MoS2 FETs | - |
dc.subject | Al2O3 dielectric | - |
dc.subject | Plasma treatment | - |
dc.subject | Mobility | - |
dc.title | Improved interfacial and electrical properties of few-layered MoS2 FETs with plasma-treated Al2O3 as gate dielectric | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.description.nature | link_to_subscribed_fulltext | - |
dc.identifier.doi | 10.1016/j.apsusc.2019.03.139 | - |
dc.identifier.scopus | eid_2-s2.0-85063194863 | - |
dc.identifier.hkuros | 315166 | - |
dc.identifier.volume | 481 | - |
dc.identifier.spage | 1028 | - |
dc.identifier.epage | 1034 | - |
dc.identifier.isi | WOS:000472176900120 | - |
dc.publisher.place | Netherlands | - |
dc.identifier.issnl | 0169-4332 | - |