File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Article: Temperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor

TitleTemperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor
Authors
KeywordsTemperature sensors
Hydrogen
Organic thin film transistors
Pentacene
Electrodes
Issue Date2020
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2020, v. 67 n. 4, p. 1776-1780 How to Cite?
AbstractAn organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H 2 response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.
Persistent Identifierhttp://hdl.handle.net/10722/287885
ISSN
2023 Impact Factor: 2.9
2023 SCImago Journal Rankings: 0.785
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLI, B-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2020-10-05T12:04:40Z-
dc.date.available2020-10-05T12:04:40Z-
dc.date.issued2020-
dc.identifier.citationIEEE Transactions on Electron Devices, 2020, v. 67 n. 4, p. 1776-1780-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/287885-
dc.description.abstractAn organic thin-film transistor (OTFT)-based hydrogen sensor with palladium (Pd) source/drain (S/D) electrodes as the sensing medium is fabricated, and the effects of operating temperature on its sensing performance are investigated. The sensor exhibits a current decrease upon exposure to hydrogen, and a rapid and reversible H 2 response upon the introduction and removal of hydrogen is observed. Heating the sensor changes its electrical characteristics and thus its hydrogen sensitivity. It is found that the effects of temperature on the hydrogen solubility and sticking coefficient of the Pd electrodes are important factors determining the sensitivity at a high temperature of 90 °C, but the temperature dependences of carrier mobility and threshold voltage of the OTFT become dominant at lower temperatures of 60 °C and 30 °C. Moreover, shorter response time is realized at higher operating temperature because higher temperature accelerates the diffusion of H atoms in the Pd electrode. However, the recovery time does not show the same trend due to a reconstruction of the pentacene layer at high operating temperature.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectTemperature sensors-
dc.subjectHydrogen-
dc.subjectOrganic thin film transistors-
dc.subjectPentacene-
dc.subjectElectrodes-
dc.titleTemperature Dependence of Sensing Characteristics for OTFT-Based Hydrogen Sensor-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2020.2973288-
dc.identifier.scopuseid_2-s2.0-85082847139-
dc.identifier.hkuros315185-
dc.identifier.volume67-
dc.identifier.issue4-
dc.identifier.spage1776-
dc.identifier.epage1780-
dc.identifier.isiWOS:000522559000059-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9383-

Export via OAI-PMH Interface in XML Formats


OR


Export to Other Non-XML Formats