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Article: Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric

TitleImproved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric
Authors
KeywordsDielectrics
Dielectrics
Transistors
Logic gates
Hafnium oxide
Issue Date2020
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55
Citation
IEEE Electron Device Letters, 2020, v. 41 n. 3, p. 385-388 How to Cite?
AbstractUniform Hf 0.5 Al 0.5 O top-gate (TG) dielectric can be grown directly on the MoS 2 surface using a high/low-temperature deposition method, and excellent performances for few-layer (FL) MoS 2 transistors with Hf 0.5 Al 0.5 O as TG dielectric can be achieved: high mobility of 90 cm 2 /Vs, small sub-threshold swing of 77 mV/dec and low interface-state density of 1.08 × 10 12 eV -1 cm -2 . The involved mechanisms lie in the facts that (1) the TG dielectric can prevent the MoS 2 surface from absorbing the oxygen and moisture in the air; (2) growing the Hf 0.5 Al 0.5 O dielectric at low temperature can well provide nucleation sites for its subsequent high-temperature growth; and (3) doping Al into HfO 2 can reduce the trap charges in the resulting HfAlO dielectric to weaken the Coulomb scattering and also produce densified and uniform dielectric film. Therefore, the Hf 0.5 Al 0.5 O TG-dielectric structure and its growth method described in this work have a high potential to fabricate high-performance FL MoS 2 field-effect transistors for practical electron device applications.
Persistent Identifierhttp://hdl.handle.net/10722/287938
ISSN
2019 Impact Factor: 4.221
2015 SCImago Journal Rankings: 1.791
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorZhao, XY-
dc.contributor.authorXu, JP-
dc.contributor.authorLiu, L-
dc.contributor.authorLai, PT-
dc.contributor.authorTang, WM-
dc.date.accessioned2020-10-05T12:05:27Z-
dc.date.available2020-10-05T12:05:27Z-
dc.date.issued2020-
dc.identifier.citationIEEE Electron Device Letters, 2020, v. 41 n. 3, p. 385-388-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10722/287938-
dc.description.abstractUniform Hf 0.5 Al 0.5 O top-gate (TG) dielectric can be grown directly on the MoS 2 surface using a high/low-temperature deposition method, and excellent performances for few-layer (FL) MoS 2 transistors with Hf 0.5 Al 0.5 O as TG dielectric can be achieved: high mobility of 90 cm 2 /Vs, small sub-threshold swing of 77 mV/dec and low interface-state density of 1.08 × 10 12 eV -1 cm -2 . The involved mechanisms lie in the facts that (1) the TG dielectric can prevent the MoS 2 surface from absorbing the oxygen and moisture in the air; (2) growing the Hf 0.5 Al 0.5 O dielectric at low temperature can well provide nucleation sites for its subsequent high-temperature growth; and (3) doping Al into HfO 2 can reduce the trap charges in the resulting HfAlO dielectric to weaken the Coulomb scattering and also produce densified and uniform dielectric film. Therefore, the Hf 0.5 Al 0.5 O TG-dielectric structure and its growth method described in this work have a high potential to fabricate high-performance FL MoS 2 field-effect transistors for practical electron device applications.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55-
dc.relation.ispartofIEEE Electron Device Letters-
dc.rightsIEEE Electron Device Letters. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectDielectrics-
dc.subjectDielectrics-
dc.subjectTransistors-
dc.subjectLogic gates-
dc.subjectHafnium oxide-
dc.titleImproved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/LED.2020.2967422-
dc.identifier.scopuseid_2-s2.0-85080955541-
dc.identifier.hkuros315183-
dc.identifier.volume41-
dc.identifier.issue3-
dc.identifier.spage385-
dc.identifier.epage388-
dc.identifier.isiWOS:000519704300019-
dc.publisher.placeUnited States-
dc.identifier.issnl0741-3106-

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