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Article: Surface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications

TitleSurface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications
Authors
KeywordsGallium arsenide
Logic gates
Dielectrics
Passivation
Hafnium oxide
Issue Date2019
PublisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16
Citation
IEEE Transactions on Electron Devices, 2019, v. 66 n. 7, p. 3080-3085 How to Cite?
AbstractDifferent lanthanide oxynitrides (LaON, NdON, CeON, and GdON) are applied as the interfacial passivation layers (IPLs) for GaAs metal-oxide-semiconductor (MOS) capacitors with HfO 2 as the gate dielectric. The measurement results show that all the IPLs can improve the quality of the HfO 2 /GaAs interface by suppressing the in-diffusions of Hf and O toward the GaAs surface from the gate dielectric, and thus the growth of unstable Ga/As oxides as proved by the atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) analysis. Among the IPLs, the LaON IPL shows the best passivating effect on the GaAs surface, and so the relevant MOS capacitor exhibits the lowest interface-state density (8 × 10 11 cm -2 eV -1 ), smallest flatband voltage (0.65 V), negligible hysteresis (33 mV), lowest gate leakage (1.08 × 10 -6 A/cm 2 at V fb + 1 V), smallest frequency dispersion (2.85% in accumulation region), and good high-field reliability. NdON exhibits slightly less performance improvement than LaON, but its lower cost and higher moisture resistance can enhance its potential for GaAs surface passivation.
Persistent Identifierhttp://hdl.handle.net/10722/288075
ISSN
2019 Impact Factor: 2.913
2015 SCImago Journal Rankings: 1.436
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorLIU, L-
dc.contributor.authorTANG, WM-
dc.contributor.authorHUANG, X-
dc.contributor.authorXU, JP-
dc.contributor.authorLai, PT-
dc.date.accessioned2020-10-05T12:07:30Z-
dc.date.available2020-10-05T12:07:30Z-
dc.date.issued2019-
dc.identifier.citationIEEE Transactions on Electron Devices, 2019, v. 66 n. 7, p. 3080-3085-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10722/288075-
dc.description.abstractDifferent lanthanide oxynitrides (LaON, NdON, CeON, and GdON) are applied as the interfacial passivation layers (IPLs) for GaAs metal-oxide-semiconductor (MOS) capacitors with HfO 2 as the gate dielectric. The measurement results show that all the IPLs can improve the quality of the HfO 2 /GaAs interface by suppressing the in-diffusions of Hf and O toward the GaAs surface from the gate dielectric, and thus the growth of unstable Ga/As oxides as proved by the atomic force microscope (AFM) and X-ray photoelectron spectroscopy (XPS) analysis. Among the IPLs, the LaON IPL shows the best passivating effect on the GaAs surface, and so the relevant MOS capacitor exhibits the lowest interface-state density (8 × 10 11 cm -2 eV -1 ), smallest flatband voltage (0.65 V), negligible hysteresis (33 mV), lowest gate leakage (1.08 × 10 -6 A/cm 2 at V fb + 1 V), smallest frequency dispersion (2.85% in accumulation region), and good high-field reliability. NdON exhibits slightly less performance improvement than LaON, but its lower cost and higher moisture resistance can enhance its potential for GaAs surface passivation.-
dc.languageeng-
dc.publisherIEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=16-
dc.relation.ispartofIEEE Transactions on Electron Devices-
dc.rightsIEEE Transactions on Electron Devices. Copyright © IEEE.-
dc.rights©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.-
dc.subjectGallium arsenide-
dc.subjectLogic gates-
dc.subjectDielectrics-
dc.subjectPassivation-
dc.subjectHafnium oxide-
dc.titleSurface Passivation Using Lanthanide Oxynitrides for GaAs Metal–Oxide–Semiconductor Applications-
dc.typeArticle-
dc.identifier.emailLai, PT: laip@eee.hku.hk-
dc.identifier.authorityLai, PT=rp00130-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1109/TED.2019.2914364-
dc.identifier.scopuseid_2-s2.0-85067609718-
dc.identifier.hkuros315170-
dc.identifier.volume66-
dc.identifier.issue7-
dc.identifier.spage3080-
dc.identifier.epage3085-
dc.identifier.isiWOS:000472184900034-
dc.publisher.placeUnited States-
dc.identifier.issnl0018-9383-

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