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Article: Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric
Title | Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric |
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Authors | |
Keywords | Logic gates Electrodes Dielectrics Phonons Scattering |
Issue Date | 2019 |
Publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 |
Citation | IEEE Electron Device Letters, 2019, v. 40 n. 12, p. 1953-1956 How to Cite? |
Abstract | Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with HfLaO as high-k gate dielectric have been fabricated, and p-type silicon wafers with resistivities of 0.001 ~ 0.002,0.005, 0.02 ~ 0.021 and 5 ~ 10Q· cm are used as their gate electrodes. The carrier mobility of the samples show an increase with increasing gate acceptor concentration, indicating that the TFT performances are affected by the hole concentration in the gate electrode. The HfLaO gate dielectric is highly polarizable and so produces surface-optical phonons, which can scatter the electrons in the IGZO channel to reduce their mobility. Therefore, this work directly demonstrates that the holes in the gate electrode can have a screening effect to suppress this remote phonon scattering of the gate dielectric on the channel carriers, just like the electrons in the metal gate, ITO gate and n-silicon gate of field-effect transistors. |
Description | eid_2-s2.0-85076303198link_to_subscribed_fulltext |
Persistent Identifier | http://hdl.handle.net/10722/288077 |
ISSN | 2023 Impact Factor: 4.1 2023 SCImago Journal Rankings: 1.250 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | SU, H | - |
dc.contributor.author | MA, YX | - |
dc.contributor.author | Lai, PT | - |
dc.contributor.author | Tang, WM | - |
dc.date.accessioned | 2020-10-05T12:07:32Z | - |
dc.date.available | 2020-10-05T12:07:32Z | - |
dc.date.issued | 2019 | - |
dc.identifier.citation | IEEE Electron Device Letters, 2019, v. 40 n. 12, p. 1953-1956 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | http://hdl.handle.net/10722/288077 | - |
dc.description | eid_2-s2.0-85076303198link_to_subscribed_fulltext | - |
dc.description.abstract | Amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with HfLaO as high-k gate dielectric have been fabricated, and p-type silicon wafers with resistivities of 0.001 ~ 0.002,0.005, 0.02 ~ 0.021 and 5 ~ 10Q· cm are used as their gate electrodes. The carrier mobility of the samples show an increase with increasing gate acceptor concentration, indicating that the TFT performances are affected by the hole concentration in the gate electrode. The HfLaO gate dielectric is highly polarizable and so produces surface-optical phonons, which can scatter the electrons in the IGZO channel to reduce their mobility. Therefore, this work directly demonstrates that the holes in the gate electrode can have a screening effect to suppress this remote phonon scattering of the gate dielectric on the channel carriers, just like the electrons in the metal gate, ITO gate and n-silicon gate of field-effect transistors. | - |
dc.language | eng | - |
dc.publisher | IEEE. The Journal's web site is located at http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55 | - |
dc.relation.ispartof | IEEE Electron Device Letters | - |
dc.rights | IEEE Electron Device Letters. Copyright © IEEE. | - |
dc.rights | ©20xx IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | - |
dc.subject | Logic gates | - |
dc.subject | Electrodes | - |
dc.subject | Dielectrics | - |
dc.subject | Phonons | - |
dc.subject | Scattering | - |
dc.title | Influence of Gate Doping Concentration on the Characteristics of Amorphous InGaZnO Thin-Film Transistors With HfLaO Gate Dielectric | - |
dc.type | Article | - |
dc.identifier.email | Lai, PT: laip@eee.hku.hk | - |
dc.identifier.authority | Lai, PT=rp00130 | - |
dc.identifier.doi | 10.1109/LED.2019.2950200 | - |
dc.identifier.scopus | eid_2-s2.0-85076303198 | - |
dc.identifier.hkuros | 315181 | - |
dc.identifier.volume | 40 | - |
dc.identifier.issue | 12 | - |
dc.identifier.spage | 1953 | - |
dc.identifier.epage | 1956 | - |
dc.identifier.isi | WOS:000507331900012 | - |
dc.publisher.place | United States | - |
dc.identifier.issnl | 0741-3106 | - |