Bphen作为电极缓冲层对有机薄膜晶体管性能的改善

Abstract

研究了二苯基邻菲罗啉以及氟化锂作为电极缓冲层对底栅顶接触型有机薄膜晶体管性能的影响，结果表明二苯基邻菲罗啉是一种比氟化锂更好的缓冲层材料。通过对二苯基邻菲罗啉缓冲层厚度的优化，获得了迁移率为0.302 cm2V-1s-1、阈值电压为-31.2 V、开关比为6.2102的器件。器件性能提升的原因是由于二苯基邻菲罗啉缓冲层的引入降低了金电极与并五苯界面的空穴注入势垒与接触电阻。

Organic thin film transistors with different buffer layers were investigated. Electric measurements reveal that 4, 7-diphenyl-1, 10-phenanthroline is a better buffer layer material than lithium fluoride. In comparison with the device with no buffer layer, the device with 4, 7-diphenyl-1, 10-phenanthroline (3 nm) buffer layer obtains an enhanced mobility of 0.302 cm2·V-1·s-1, threshold voltage of -31.2 V and on/off current ratio of 6.2×102. The improvements of the device performance are attributed to the reduction of barrier height and the contact resistance at Au/pentacene interface.