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Article: Tungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media

TitleTungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media
Authors
Keywordsphototransistors
ion-gated transistors
ionic liquids
polyimide
tungsten oxide
Issue Date2019
Citation
Journal of Physics D: Applied Physics, 2019, v. 52, n. 30, article no. 305102 How to Cite?
Abstract© 2019 IOP Publishing Ltd. Ion-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5-1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5-2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications.
Persistent Identifierhttp://hdl.handle.net/10722/295415
ISSN
2023 Impact Factor: 3.1
2023 SCImago Journal Rankings: 0.681
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorDe Oliveira Silva, Gabriel Vinicius-
dc.contributor.authorSubramanian, Arunprabaharan-
dc.contributor.authorMeng, Xiang-
dc.contributor.authorZhang, Shiming-
dc.contributor.authorBarbosa, Martin S.-
dc.contributor.authorBaloukas, Bill-
dc.contributor.authorChartrand, Daniel-
dc.contributor.authorGonzáles, Juan C.-
dc.contributor.authorOrlandi, Marcelo Ornaghi-
dc.contributor.authorSoavi, Francesca-
dc.contributor.authorCicoira, Fabio-
dc.contributor.authorSantato, Clara-
dc.date.accessioned2021-01-18T15:46:49Z-
dc.date.available2021-01-18T15:46:49Z-
dc.date.issued2019-
dc.identifier.citationJournal of Physics D: Applied Physics, 2019, v. 52, n. 30, article no. 305102-
dc.identifier.issn0022-3727-
dc.identifier.urihttp://hdl.handle.net/10722/295415-
dc.description.abstract© 2019 IOP Publishing Ltd. Ion-gated transistors employ ionic gating media (e.g. ionic liquids, polymer electrolytes, aqueous saline solutions) to modulate the density of the charge carriers in the transistor channel. Not only they operate at low voltages (ca 0.5-1 V) but they can also feature printability, flexibility and easy integration with chemo- and bio-sensing platforms. Metal oxides are transistor channel materials interesting for their processability in air, at low temperature. Among metal oxides, tungsten oxide (band gap ca 2.5-2.7 eV) stands out for its electrochromic, gas sensing and photocatalytic properties. Here we demonstrate ion-gated tungsten oxide transistors and phototransistors working in different ion gating media, such as one hydrophobic ionic liquid and an aqueous electrolyte, fabricated both on rigid and flexible substrates. Ion-gated tungsten oxide phototransistors operating in aqueous media could be used as photocatalytic sensors in portable applications.-
dc.languageeng-
dc.relation.ispartofJournal of Physics D: Applied Physics-
dc.subjectphototransistors-
dc.subjection-gated transistors-
dc.subjectionic liquids-
dc.subjectpolyimide-
dc.subjecttungsten oxide-
dc.titleTungsten oxide ion-gated phototransistors using ionic liquid and aqueous gating media-
dc.typeArticle-
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1088/1361-6463/ab1dbb-
dc.identifier.scopuseid_2-s2.0-85070109178-
dc.identifier.volume52-
dc.identifier.issue30-
dc.identifier.spagearticle no. 305102-
dc.identifier.epagearticle no. 305102-
dc.identifier.eissn1361-6463-
dc.identifier.isiWOS:000468941500001-
dc.identifier.issnl0022-3727-

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